NaBa2Cu3S5: A doped p-type degenerate semiconductor

Mihai Sturza, Fei Han, Daniel P. Shoemaker, Christos D. Malliakas, Duck Young Chung, Hosub Jin, Arthur J Freeman, Mercouri G Kanatzidis

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Abstract

Mixed S2-/S1- oxidation states have been discovered in the new quaternary compound NaBa2Cu3S5. Synthesized from the reaction of Cu in a molten alkali metal/polysulfide flux, the compound crystallizes in monoclinic space group C2/m with a = 16.5363(7) Å, b = 5.5374(5) Å, c = 10.3717(10) Å, β = 98.535(8). The Na+ Ba2 +2 [Cu+ 3S 3]3-S2 2- crystal structure contains layers of edge sharing CuS4 tetrahedra and sheets of S 2 2- dimers. These layers are separated by mixed Ba/Na cation layers. The conductivity of the single crystals of NaBa 2Cu3S5 is ∼450 S cm-1 at room temperature, and increasing conductivity with decreasing temperature is observed, indicating metallic behavior despite the optical band gap of 0.45 eV. A small positive thermopower (45-55 μV K-1 from 300 K to 500 K) and Hall effect measurements also confirm p-type conductivity with carrier concentration at 200 K of ∼1.6 × 1021 cm-3 and a hole mobility of ∼2 cm2 V-1 s-1. NaBa 2Cu3S5 exhibits temperature-independent Pauli paramagnetism.

Original languageEnglish
Pages (from-to)7210-7217
Number of pages8
JournalInorganic Chemistry
Volume52
Issue number12
DOIs
Publication statusPublished - Jun 17 2013

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ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry

Cite this

Sturza, M., Han, F., Shoemaker, D. P., Malliakas, C. D., Chung, D. Y., Jin, H., ... Kanatzidis, M. G. (2013). NaBa2Cu3S5: A doped p-type degenerate semiconductor. Inorganic Chemistry, 52(12), 7210-7217. https://doi.org/10.1021/ic4008284