Nanoscale impedance microscopy - A characterization tool for nanoelectronic devices and circuits

Liam S C Pingree, Elizabeth Fabbroni Martin, Kenneth R. Shull, Mark C Hersam

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits.

Original languageEnglish
Pages (from-to)255-259
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume4
Issue number2
DOIs
Publication statusPublished - Mar 2005

Fingerprint

Nanoelectronics
Microscopic examination
Networks (circuits)
Atomic force microscopy
Failure analysis
Integrated circuits
Electron beams
Spectroscopy
Electrodes
Testing
Experiments

Keywords

  • Atomic force microscopy (AFM)
  • Conductive atomic force microscopy (cAFM)
  • Defect detection
  • Failure analysis
  • Impedance spectroscopy
  • Integrated circuits
  • Nanoelectronics
  • Nanoscale impedance microscopy (NIM)

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

Cite this

Nanoscale impedance microscopy - A characterization tool for nanoelectronic devices and circuits. / Pingree, Liam S C; Martin, Elizabeth Fabbroni; Shull, Kenneth R.; Hersam, Mark C.

In: IEEE Transactions on Nanotechnology, Vol. 4, No. 2, 03.2005, p. 255-259.

Research output: Contribution to journalArticle

Pingree, Liam S C ; Martin, Elizabeth Fabbroni ; Shull, Kenneth R. ; Hersam, Mark C. / Nanoscale impedance microscopy - A characterization tool for nanoelectronic devices and circuits. In: IEEE Transactions on Nanotechnology. 2005 ; Vol. 4, No. 2. pp. 255-259.
@article{482a9691e13849818744d8c029223681,
title = "Nanoscale impedance microscopy - A characterization tool for nanoelectronic devices and circuits",
abstract = "A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits.",
keywords = "Atomic force microscopy (AFM), Conductive atomic force microscopy (cAFM), Defect detection, Failure analysis, Impedance spectroscopy, Integrated circuits, Nanoelectronics, Nanoscale impedance microscopy (NIM)",
author = "Pingree, {Liam S C} and Martin, {Elizabeth Fabbroni} and Shull, {Kenneth R.} and Hersam, {Mark C}",
year = "2005",
month = "3",
doi = "10.1109/TNANO.2004.837856",
language = "English",
volume = "4",
pages = "255--259",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Nanoscale impedance microscopy - A characterization tool for nanoelectronic devices and circuits

AU - Pingree, Liam S C

AU - Martin, Elizabeth Fabbroni

AU - Shull, Kenneth R.

AU - Hersam, Mark C

PY - 2005/3

Y1 - 2005/3

N2 - A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits.

AB - A recently developed conductive atomic force microscopy (cAFM) technique, nanoscale impedance microscopy (NIM), is presented as a characterization strategy for nanoelectronic devices and circuits. NIM concurrently monitors the amplitude and phase response of the current through a cAFM tip in response to a temporally periodic applied bias. By varying the frequency of the driving potential, the resistance and reactance of conductive pathways can be quantitatively determined. Proof-of-principle experiments show 10-nm spatial resolution and ideal frequency-dependent impedance spectroscopy behavior for test circuits connected to electron beam lithographically patterned electrode arrays. Possible applications of NIM include defect detection and failure analysis testing for nanoscale integrated circuits.

KW - Atomic force microscopy (AFM)

KW - Conductive atomic force microscopy (cAFM)

KW - Defect detection

KW - Failure analysis

KW - Impedance spectroscopy

KW - Integrated circuits

KW - Nanoelectronics

KW - Nanoscale impedance microscopy (NIM)

UR - http://www.scopus.com/inward/record.url?scp=15844421976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15844421976&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2004.837856

DO - 10.1109/TNANO.2004.837856

M3 - Article

VL - 4

SP - 255

EP - 259

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 2

ER -