Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure

Sylvie Rangan, Malathi Kalyanikar, Junxi Duan, Gang Liu, Robert Allen Bartynski, Eva Y. Andrei, Leonard C Feldman, Eric Garfunkel

Research output: Contribution to journalArticle

Abstract

Measuring and understanding electric fields in multilayered materials at the nanoscale remains a challenging problem impeding the development of novel devices. At this scale, it is far from obvious that materials can be accurately described by their intrinsic bulk properties, and considerations of the interfaces between layered materials become unavoidable for a complete description of the system's electronic properties. Here, a general approach to the direct measurement of nanoscale internal fields is proposed. Small spot X-ray photoemission was performed on a biased graphene/SiO2/Si structure in order to experimentally determine the potential profile across the system, including discontinuities at the interfaces. Core levels provide a measure of the local potential and are used to reconstruct the potential profile as a function of the depth through the stack. It is found that each interface plays a critical role in establishing the potential across the dielectric, and the origin of the potential discontinuities at each interface is discussed.

Original languageEnglish
Pages (from-to)3434-3439
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume7
Issue number17
DOIs
Publication statusPublished - Sep 1 2016

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Graphene
graphene
insulators
Semiconductor materials
Core levels
Photoemission
discontinuity
Electronic properties
Electric fields
X rays
profiles
photoelectric emission
electric fields
electronics
x rays

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure. / Rangan, Sylvie; Kalyanikar, Malathi; Duan, Junxi; Liu, Gang; Bartynski, Robert Allen; Andrei, Eva Y.; Feldman, Leonard C; Garfunkel, Eric.

In: Journal of Physical Chemistry Letters, Vol. 7, No. 17, 01.09.2016, p. 3434-3439.

Research output: Contribution to journalArticle

Rangan, Sylvie ; Kalyanikar, Malathi ; Duan, Junxi ; Liu, Gang ; Bartynski, Robert Allen ; Andrei, Eva Y. ; Feldman, Leonard C ; Garfunkel, Eric. / Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure. In: Journal of Physical Chemistry Letters. 2016 ; Vol. 7, No. 17. pp. 3434-3439.
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