Nanoscale measurements in organic memory devices from C60 in insulating polymers

Alokik Kanwal, Manish Chhowalla

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Following our pervious works demonstrating all-organic memory devices based on a nanocomposite material consisting of C60 molecules dispersed in an insulating polymer. In this paper, we will report on conducting atomic force microscopy (c-AFM) measurements from nanosized regions on memory devices. The c-AFM nanoscale measurements show a hysteresis of high and low conductance states, in agreement with our previous reports on macroscopic memory devices. The c-AFM measurements were verified by 30nm gap cell devices fabricated via e-beam lithography, which also showed similar current values. Analysis of our data reveals that the conduction mechanism switches from direct tunneling to Fowler-Nordheim tunneling above a threshold voltage.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages59-64
Number of pages6
Volume905
Publication statusPublished - 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

Fingerprint

Atomic force microscopy
Polymers
Data storage equipment
Threshold voltage
Field emission
Lithography
Hysteresis
Nanocomposites
Switches
Molecules

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kanwal, A., & Chhowalla, M. (2005). Nanoscale measurements in organic memory devices from C60 in insulating polymers. In Materials Research Society Symposium Proceedings (Vol. 905, pp. 59-64)

Nanoscale measurements in organic memory devices from C60 in insulating polymers. / Kanwal, Alokik; Chhowalla, Manish.

Materials Research Society Symposium Proceedings. Vol. 905 2005. p. 59-64.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kanwal, A & Chhowalla, M 2005, Nanoscale measurements in organic memory devices from C60 in insulating polymers. in Materials Research Society Symposium Proceedings. vol. 905, pp. 59-64, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.
Kanwal A, Chhowalla M. Nanoscale measurements in organic memory devices from C60 in insulating polymers. In Materials Research Society Symposium Proceedings. Vol. 905. 2005. p. 59-64
Kanwal, Alokik ; Chhowalla, Manish. / Nanoscale measurements in organic memory devices from C60 in insulating polymers. Materials Research Society Symposium Proceedings. Vol. 905 2005. pp. 59-64
@inproceedings{4bed974b36d94e29a39212b9cd307e3f,
title = "Nanoscale measurements in organic memory devices from C60 in insulating polymers",
abstract = "Following our pervious works demonstrating all-organic memory devices based on a nanocomposite material consisting of C60 molecules dispersed in an insulating polymer. In this paper, we will report on conducting atomic force microscopy (c-AFM) measurements from nanosized regions on memory devices. The c-AFM nanoscale measurements show a hysteresis of high and low conductance states, in agreement with our previous reports on macroscopic memory devices. The c-AFM measurements were verified by 30nm gap cell devices fabricated via e-beam lithography, which also showed similar current values. Analysis of our data reveals that the conduction mechanism switches from direct tunneling to Fowler-Nordheim tunneling above a threshold voltage.",
author = "Alokik Kanwal and Manish Chhowalla",
year = "2005",
language = "English",
isbn = "1558998608",
volume = "905",
pages = "59--64",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Nanoscale measurements in organic memory devices from C60 in insulating polymers

AU - Kanwal, Alokik

AU - Chhowalla, Manish

PY - 2005

Y1 - 2005

N2 - Following our pervious works demonstrating all-organic memory devices based on a nanocomposite material consisting of C60 molecules dispersed in an insulating polymer. In this paper, we will report on conducting atomic force microscopy (c-AFM) measurements from nanosized regions on memory devices. The c-AFM nanoscale measurements show a hysteresis of high and low conductance states, in agreement with our previous reports on macroscopic memory devices. The c-AFM measurements were verified by 30nm gap cell devices fabricated via e-beam lithography, which also showed similar current values. Analysis of our data reveals that the conduction mechanism switches from direct tunneling to Fowler-Nordheim tunneling above a threshold voltage.

AB - Following our pervious works demonstrating all-organic memory devices based on a nanocomposite material consisting of C60 molecules dispersed in an insulating polymer. In this paper, we will report on conducting atomic force microscopy (c-AFM) measurements from nanosized regions on memory devices. The c-AFM nanoscale measurements show a hysteresis of high and low conductance states, in agreement with our previous reports on macroscopic memory devices. The c-AFM measurements were verified by 30nm gap cell devices fabricated via e-beam lithography, which also showed similar current values. Analysis of our data reveals that the conduction mechanism switches from direct tunneling to Fowler-Nordheim tunneling above a threshold voltage.

UR - http://www.scopus.com/inward/record.url?scp=34249945596&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249945596&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558998608

SN - 9781558998605

VL - 905

SP - 59

EP - 64

BT - Materials Research Society Symposium Proceedings

ER -