Nanoscale measurements in organic memory devices from C60 in insulating polymers

Alokik Kanwal, Manish Chhowalla

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Following our pervious works demonstrating all-organic memory devices based on a nanocomposite material consisting of C60 molecules dispersed in an insulating polymer. In this paper, we will report on conducting atomic force microscopy (c-AFM) measurements from nanosized regions on memory devices. The c-AFM nanoscale measurements show a hysteresis of high and low conductance states, in agreement with our previous reports on macroscopic memory devices. The c-AFM measurements were verified by 30nm gap cell devices fabricated via e-beam lithography, which also showed similar current values. Analysis of our data reveals that the conduction mechanism switches from direct tunneling to Fowler-Nordheim tunneling above a threshold voltage.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages59-64
Number of pages6
Volume905
Publication statusPublished - 2005
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kanwal, A., & Chhowalla, M. (2005). Nanoscale measurements in organic memory devices from C60 in insulating polymers. In Materials Research Society Symposium Proceedings (Vol. 905, pp. 59-64)