Nanoscale n-channel and ambipolar organic field-effect transistors

Taeho Jung; Byungwook Yoo; Liang Wang; Ananth Dodabalapur; Brooks A. Jones; Antonio Facchetti; Michael R. Wasielewski; Tobin J. Marks

doi:10.1063/1.2200591

Nanoscale n-channel and ambipolar organic field-effect transistors

Taeho Jung, Byungwook Yoo, Liang Wang, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R. Wasielewski, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.

Original language	English
Article number	183102
Journal	Applied Physics Letters
Volume	88
Issue number	18
DOIs	https://doi.org/10.1063/1.2200591
Publication status	Published - May 1 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Nanoscale n-channel and ambipolar organic field-effect transistors",

abstract = "N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.",

author = "Taeho Jung and Byungwook Yoo and Liang Wang and Ananth Dodabalapur and Jones, {Brooks A.} and Antonio Facchetti and Wasielewski, {Michael R.} and Marks, {Tobin J.}",

note = "Funding Information: The authors would like to gratefully acknowledge support from the NSF through NIRT (ECS-021698), the AFOSR (STTR FA 9550-04-0080), the Texas Advanced Technology Program, the NASA Institute for Nanoelectronics and Computing (NCC2-3163), ONR (N00014-05-1-0021), and NSF through the Northwestern U. MRSEC (DMR-0076097/006). The authors also acknowledge helpful support from OrganicID, Inc. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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doi = "10.1063/1.2200591",

language = "English",

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AU - Jung, Taeho

AU - Yoo, Byungwook

AU - Wang, Liang

AU - Dodabalapur, Ananth

AU - Jones, Brooks A.

AU - Facchetti, Antonio

AU - Wasielewski, Michael R.

AU - Marks, Tobin J.

N1 - Funding Information: The authors would like to gratefully acknowledge support from the NSF through NIRT (ECS-021698), the AFOSR (STTR FA 9550-04-0080), the Texas Advanced Technology Program, the NASA Institute for Nanoelectronics and Computing (NCC2-3163), ONR (N00014-05-1-0021), and NSF through the Northwestern U. MRSEC (DMR-0076097/006). The authors also acknowledge helpful support from OrganicID, Inc. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.

AB - N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.

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Nanoscale n-channel and ambipolar organic field-effect transistors

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