Nanoscale n-channel and ambipolar organic field-effect transistors

Taeho Jung, Byungwook Yoo, Liang Wang, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R Wasielewski, Tobin J Marks

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Abstract

N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.

Original languageEnglish
Article number183102
JournalApplied Physics Letters
Volume88
Issue number18
DOIs
Publication statusPublished - May 1 2006

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jung, T., Yoo, B., Wang, L., Dodabalapur, A., Jones, B. A., Facchetti, A., ... Marks, T. J. (2006). Nanoscale n-channel and ambipolar organic field-effect transistors. Applied Physics Letters, 88(18), [183102]. https://doi.org/10.1063/1.2200591