Abstract
N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.
| Original language | English |
|---|---|
| Article number | 183102 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - May 1 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Nanoscale n-channel and ambipolar organic field-effect transistors. / Jung, Taeho; Yoo, Byungwook; Wang, Liang; Dodabalapur, Ananth; Jones, Brooks A.; Facchetti, Antonio; Wasielewski, Michael R; Marks, Tobin J.
In: Applied Physics Letters, Vol. 88, No. 18, 183102, 01.05.2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nanoscale n-channel and ambipolar organic field-effect transistors
AU - Jung, Taeho
AU - Yoo, Byungwook
AU - Wang, Liang
AU - Dodabalapur, Ananth
AU - Jones, Brooks A.
AU - Facchetti, Antonio
AU - Wasielewski, Michael R
AU - Marks, Tobin J
PY - 2006/5/1
Y1 - 2006/5/1
N2 - N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.
AB - N -channel and ambipolar organic field-effect transistors (OFETs) with a few tens of nanometer channel length were fabricated and characterized. N, N′ -bis (n -octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) was employed as the active semiconductor and yielded a linear regime electron mobility of 2.3× 10-3 cm2 V s at 5× 105 Vcm in an OFET with channel length of 15 nm. An ambipolar heterostructure transistor consisting of thin layers of PDI-8C N2 and pentacene was fabricated with channel length of about 23 nm. Field-effect hole and electron mobilities of 9.2× 10-3 and 4.0× 10-3 cm2 V s, respectively, are obtained at 5× 105 Vcm. These results represent the shortest channel length n -channel and ambipolar organic transistors that have been fabricated.
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U2 - 10.1063/1.2200591
DO - 10.1063/1.2200591
M3 - Article
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 18
M1 - 183102
ER -