Nanoscale structure, composition, and charge transport analysis of transparent conducting oxide nanowires written by focused ion beam implantation

Norma E. Sosa, Christopher Chen, Jun Liu, Sujing Xie, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Realizing optically transparent functional circuitry continues to fuel scientific and technological interest in transparent conducting oxides (TCOs). However, precise means for creating transparent interconnects for device-to-device integration has remained elusive. Here we report on the chemical, microstructural, and electronic properties of transparent conducting oxide nanowires (Ga-doped In2O3) created by direct-write focused ion beam (Ga+) implantation within an insulating oxide substrate (In2O3). First, methodology for preparing TEM-ready samples is presented that enables detailed TEM-based analysis of individual nanowires. Differences in diffraction features between doped and undoped oxide regions, accompanied by RTA results, support a model in which oxygen vacancies and amorphization comprise the predominant doping/carrier creation mechanism. The same isolated nanowires are then subjected to chemical profiling, providing quantitative information on the lateral Ga doping dimensions, which are in good agreement with conductive AFM images. Furthermore, spatially selective nanoscale EELS spectroscopy provides additional evidence for changes in the oxygen site chemical environment in the FIB-processed/doped In2O3, and for negligible changes in the surrounding non-FIB-processed/undoped oxide. The nanowires exhibit ohmic electrical behavior and with an average estimated conductivity of 1600-3600 S cm-1, similar to macroscale Ga-doped In2O3 films grown by conventional processes.

Original languageEnglish
Pages (from-to)7347-7354
Number of pages8
JournalJournal of the American Chemical Society
Volume132
Issue number21
DOIs
Publication statusPublished - Jun 2 2010

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Nanowires
Focused ion beams
Oxides
Charge transfer
Ions
Chemical analysis
Doping (additives)
Oxygen
Transmission electron microscopy
Equipment and Supplies
Amorphization
Rapid thermal annealing
Electron energy loss spectroscopy
Oxygen vacancies
Ion implantation
Electronic properties
Spectrum Analysis
Diffraction
Spectroscopy
Substrates

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Nanoscale structure, composition, and charge transport analysis of transparent conducting oxide nanowires written by focused ion beam implantation. / Sosa, Norma E.; Chen, Christopher; Liu, Jun; Xie, Sujing; Marks, Tobin J; Hersam, Mark C.

In: Journal of the American Chemical Society, Vol. 132, No. 21, 02.06.2010, p. 7347-7354.

Research output: Contribution to journalArticle

@article{dab1e17d6ff149d296294f5c6ddfd3a8,
title = "Nanoscale structure, composition, and charge transport analysis of transparent conducting oxide nanowires written by focused ion beam implantation",
abstract = "Realizing optically transparent functional circuitry continues to fuel scientific and technological interest in transparent conducting oxides (TCOs). However, precise means for creating transparent interconnects for device-to-device integration has remained elusive. Here we report on the chemical, microstructural, and electronic properties of transparent conducting oxide nanowires (Ga-doped In2O3) created by direct-write focused ion beam (Ga+) implantation within an insulating oxide substrate (In2O3). First, methodology for preparing TEM-ready samples is presented that enables detailed TEM-based analysis of individual nanowires. Differences in diffraction features between doped and undoped oxide regions, accompanied by RTA results, support a model in which oxygen vacancies and amorphization comprise the predominant doping/carrier creation mechanism. The same isolated nanowires are then subjected to chemical profiling, providing quantitative information on the lateral Ga doping dimensions, which are in good agreement with conductive AFM images. Furthermore, spatially selective nanoscale EELS spectroscopy provides additional evidence for changes in the oxygen site chemical environment in the FIB-processed/doped In2O3, and for negligible changes in the surrounding non-FIB-processed/undoped oxide. The nanowires exhibit ohmic electrical behavior and with an average estimated conductivity of 1600-3600 S cm-1, similar to macroscale Ga-doped In2O3 films grown by conventional processes.",
author = "Sosa, {Norma E.} and Christopher Chen and Jun Liu and Sujing Xie and Marks, {Tobin J} and Hersam, {Mark C}",
year = "2010",
month = "6",
day = "2",
doi = "10.1021/ja9092242",
language = "English",
volume = "132",
pages = "7347--7354",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "21",

}

TY - JOUR

T1 - Nanoscale structure, composition, and charge transport analysis of transparent conducting oxide nanowires written by focused ion beam implantation

AU - Sosa, Norma E.

AU - Chen, Christopher

AU - Liu, Jun

AU - Xie, Sujing

AU - Marks, Tobin J

AU - Hersam, Mark C

PY - 2010/6/2

Y1 - 2010/6/2

N2 - Realizing optically transparent functional circuitry continues to fuel scientific and technological interest in transparent conducting oxides (TCOs). However, precise means for creating transparent interconnects for device-to-device integration has remained elusive. Here we report on the chemical, microstructural, and electronic properties of transparent conducting oxide nanowires (Ga-doped In2O3) created by direct-write focused ion beam (Ga+) implantation within an insulating oxide substrate (In2O3). First, methodology for preparing TEM-ready samples is presented that enables detailed TEM-based analysis of individual nanowires. Differences in diffraction features between doped and undoped oxide regions, accompanied by RTA results, support a model in which oxygen vacancies and amorphization comprise the predominant doping/carrier creation mechanism. The same isolated nanowires are then subjected to chemical profiling, providing quantitative information on the lateral Ga doping dimensions, which are in good agreement with conductive AFM images. Furthermore, spatially selective nanoscale EELS spectroscopy provides additional evidence for changes in the oxygen site chemical environment in the FIB-processed/doped In2O3, and for negligible changes in the surrounding non-FIB-processed/undoped oxide. The nanowires exhibit ohmic electrical behavior and with an average estimated conductivity of 1600-3600 S cm-1, similar to macroscale Ga-doped In2O3 films grown by conventional processes.

AB - Realizing optically transparent functional circuitry continues to fuel scientific and technological interest in transparent conducting oxides (TCOs). However, precise means for creating transparent interconnects for device-to-device integration has remained elusive. Here we report on the chemical, microstructural, and electronic properties of transparent conducting oxide nanowires (Ga-doped In2O3) created by direct-write focused ion beam (Ga+) implantation within an insulating oxide substrate (In2O3). First, methodology for preparing TEM-ready samples is presented that enables detailed TEM-based analysis of individual nanowires. Differences in diffraction features between doped and undoped oxide regions, accompanied by RTA results, support a model in which oxygen vacancies and amorphization comprise the predominant doping/carrier creation mechanism. The same isolated nanowires are then subjected to chemical profiling, providing quantitative information on the lateral Ga doping dimensions, which are in good agreement with conductive AFM images. Furthermore, spatially selective nanoscale EELS spectroscopy provides additional evidence for changes in the oxygen site chemical environment in the FIB-processed/doped In2O3, and for negligible changes in the surrounding non-FIB-processed/undoped oxide. The nanowires exhibit ohmic electrical behavior and with an average estimated conductivity of 1600-3600 S cm-1, similar to macroscale Ga-doped In2O3 films grown by conventional processes.

UR - http://www.scopus.com/inward/record.url?scp=77952814059&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952814059&partnerID=8YFLogxK

U2 - 10.1021/ja9092242

DO - 10.1021/ja9092242

M3 - Article

VL - 132

SP - 7347

EP - 7354

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 21

ER -