Nanoscale writing of transparent conducting oxide features with a focused ion beam

Norma E. Sosa, Jun Liu, Christopher Chen, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An effective method for the spatially-controlled writing of embedded, optically transparent, electrically conducting oxide nanowires, through focused ion beam (FIB) implantation into highly resistive transparent metal oxide thin films, was reported. Highly resistive In2O3 thin films were deposited on glass substrates with horizontal dual gun ion assisted deposition (HDG-IAD) system at room temperature from an In2O 3 target. Deposition was controlled with a system pressure of 5.9× 10-2 Pa and an O2 partial pressure of 3.7×10-2 Pa. The In2O3 films were cleaned by sonication for 10 mm. A modified atomic force microscope was used to perform nanoscale electrical mapping of the doped regions, with either boron doped diamond coated probes or Pt coated probes. It was observed that FIB enables the fabrication of embedded, optically transparent, electrically conducting wires.

Original languageEnglish
Pages (from-to)721-725
Number of pages5
JournalAdvanced Materials
Volume21
Issue number6
DOIs
Publication statusPublished - Feb 9 2009

Fingerprint

Focused ion beams
Oxides
Thin films
Diamond
Boron
Sonication
Ion sources
Partial pressure
Oxide films
Nanowires
Diamonds
Microscopes
Metals
Wire
Fabrication
Glass
Substrates
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nanoscale writing of transparent conducting oxide features with a focused ion beam. / Sosa, Norma E.; Liu, Jun; Chen, Christopher; Marks, Tobin J; Hersam, Mark C.

In: Advanced Materials, Vol. 21, No. 6, 09.02.2009, p. 721-725.

Research output: Contribution to journalArticle

Sosa, Norma E. ; Liu, Jun ; Chen, Christopher ; Marks, Tobin J ; Hersam, Mark C. / Nanoscale writing of transparent conducting oxide features with a focused ion beam. In: Advanced Materials. 2009 ; Vol. 21, No. 6. pp. 721-725.
@article{d33930e779474375b0041e2ac38241ab,
title = "Nanoscale writing of transparent conducting oxide features with a focused ion beam",
abstract = "An effective method for the spatially-controlled writing of embedded, optically transparent, electrically conducting oxide nanowires, through focused ion beam (FIB) implantation into highly resistive transparent metal oxide thin films, was reported. Highly resistive In2O3 thin films were deposited on glass substrates with horizontal dual gun ion assisted deposition (HDG-IAD) system at room temperature from an In2O 3 target. Deposition was controlled with a system pressure of 5.9× 10-2 Pa and an O2 partial pressure of 3.7×10-2 Pa. The In2O3 films were cleaned by sonication for 10 mm. A modified atomic force microscope was used to perform nanoscale electrical mapping of the doped regions, with either boron doped diamond coated probes or Pt coated probes. It was observed that FIB enables the fabrication of embedded, optically transparent, electrically conducting wires.",
author = "Sosa, {Norma E.} and Jun Liu and Christopher Chen and Marks, {Tobin J} and Hersam, {Mark C}",
year = "2009",
month = "2",
day = "9",
doi = "10.1002/adma.200802129",
language = "English",
volume = "21",
pages = "721--725",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "6",

}

TY - JOUR

T1 - Nanoscale writing of transparent conducting oxide features with a focused ion beam

AU - Sosa, Norma E.

AU - Liu, Jun

AU - Chen, Christopher

AU - Marks, Tobin J

AU - Hersam, Mark C

PY - 2009/2/9

Y1 - 2009/2/9

N2 - An effective method for the spatially-controlled writing of embedded, optically transparent, electrically conducting oxide nanowires, through focused ion beam (FIB) implantation into highly resistive transparent metal oxide thin films, was reported. Highly resistive In2O3 thin films were deposited on glass substrates with horizontal dual gun ion assisted deposition (HDG-IAD) system at room temperature from an In2O 3 target. Deposition was controlled with a system pressure of 5.9× 10-2 Pa and an O2 partial pressure of 3.7×10-2 Pa. The In2O3 films were cleaned by sonication for 10 mm. A modified atomic force microscope was used to perform nanoscale electrical mapping of the doped regions, with either boron doped diamond coated probes or Pt coated probes. It was observed that FIB enables the fabrication of embedded, optically transparent, electrically conducting wires.

AB - An effective method for the spatially-controlled writing of embedded, optically transparent, electrically conducting oxide nanowires, through focused ion beam (FIB) implantation into highly resistive transparent metal oxide thin films, was reported. Highly resistive In2O3 thin films were deposited on glass substrates with horizontal dual gun ion assisted deposition (HDG-IAD) system at room temperature from an In2O 3 target. Deposition was controlled with a system pressure of 5.9× 10-2 Pa and an O2 partial pressure of 3.7×10-2 Pa. The In2O3 films were cleaned by sonication for 10 mm. A modified atomic force microscope was used to perform nanoscale electrical mapping of the doped regions, with either boron doped diamond coated probes or Pt coated probes. It was observed that FIB enables the fabrication of embedded, optically transparent, electrically conducting wires.

UR - http://www.scopus.com/inward/record.url?scp=60349086183&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60349086183&partnerID=8YFLogxK

U2 - 10.1002/adma.200802129

DO - 10.1002/adma.200802129

M3 - Article

AN - SCOPUS:60349086183

VL - 21

SP - 721

EP - 725

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 6

ER -