Nanostructured thermoelectric materials and high-efficiency power-generation modules

Timothy P. Hogan, Adam Downey, Jarrod Short, Jonathan D'Angelo, Chun I. Wu, Eric Quarez, John Androulakis, Pierre F P Poudeu, Joseph R. Sootsman, Duck Young Chung, Mercouri G Kanatzidis, S. D. Mahanti, Edward J. Timm, Harold Schock, Fei Ren, Jason Johnson, Eldon D. Case

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

For thermoelectric applications, the best materials have high electrical conductivity and thermopower and, simultaneously, low thermal conductivity. Such a combination of properties is usually found in heavily doped semiconductors. Renewed interest in this topic has followed recent theoretical predictions that significant increases in performance are possible for nanostructured materials, and this has been experimentally verified. During exploratory synthetic studies of chalcogenide-based bulk thermoelectric materials it was discovered that several compounds spontaneously formed endotaxially embedded nanostructures. These compounds have some of the best known properties for bulk thermoelectric materials in the 500-800 K temperature range. Here we report our continued efforts to better understand the role of the nanostructures while concurrently furthering the development of these new materials (for example n-type lead-antimony-silver-tellurium, and p-type lead-antimony-silver-tin-tellurium) into thermoelectric power-generation devices.

Original languageEnglish
Pages (from-to)704-710
Number of pages7
JournalJournal of Electronic Materials
Volume36
Issue number7
DOIs
Publication statusPublished - Jul 2007

Fingerprint

thermoelectric materials
power efficiency
tellurium
antimony
Power generation
thermoelectric power generation
modules
silver
Tellurium
Antimony
Thermoelectric power
Silver
Nanostructures
tin
thermal conductivity
Lead
electrical resistivity
Tin
predictions
Nanostructured materials

Keywords

  • Bulk materials
  • Nanostructures
  • Thermoelectrics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Hogan, T. P., Downey, A., Short, J., D'Angelo, J., Wu, C. I., Quarez, E., ... Case, E. D. (2007). Nanostructured thermoelectric materials and high-efficiency power-generation modules. Journal of Electronic Materials, 36(7), 704-710. https://doi.org/10.1007/s11664-007-0174-9

Nanostructured thermoelectric materials and high-efficiency power-generation modules. / Hogan, Timothy P.; Downey, Adam; Short, Jarrod; D'Angelo, Jonathan; Wu, Chun I.; Quarez, Eric; Androulakis, John; Poudeu, Pierre F P; Sootsman, Joseph R.; Chung, Duck Young; Kanatzidis, Mercouri G; Mahanti, S. D.; Timm, Edward J.; Schock, Harold; Ren, Fei; Johnson, Jason; Case, Eldon D.

In: Journal of Electronic Materials, Vol. 36, No. 7, 07.2007, p. 704-710.

Research output: Contribution to journalArticle

Hogan, TP, Downey, A, Short, J, D'Angelo, J, Wu, CI, Quarez, E, Androulakis, J, Poudeu, PFP, Sootsman, JR, Chung, DY, Kanatzidis, MG, Mahanti, SD, Timm, EJ, Schock, H, Ren, F, Johnson, J & Case, ED 2007, 'Nanostructured thermoelectric materials and high-efficiency power-generation modules', Journal of Electronic Materials, vol. 36, no. 7, pp. 704-710. https://doi.org/10.1007/s11664-007-0174-9
Hogan, Timothy P. ; Downey, Adam ; Short, Jarrod ; D'Angelo, Jonathan ; Wu, Chun I. ; Quarez, Eric ; Androulakis, John ; Poudeu, Pierre F P ; Sootsman, Joseph R. ; Chung, Duck Young ; Kanatzidis, Mercouri G ; Mahanti, S. D. ; Timm, Edward J. ; Schock, Harold ; Ren, Fei ; Johnson, Jason ; Case, Eldon D. / Nanostructured thermoelectric materials and high-efficiency power-generation modules. In: Journal of Electronic Materials. 2007 ; Vol. 36, No. 7. pp. 704-710.
@article{fa60aceadf384fa7a737643c64669a92,
title = "Nanostructured thermoelectric materials and high-efficiency power-generation modules",
abstract = "For thermoelectric applications, the best materials have high electrical conductivity and thermopower and, simultaneously, low thermal conductivity. Such a combination of properties is usually found in heavily doped semiconductors. Renewed interest in this topic has followed recent theoretical predictions that significant increases in performance are possible for nanostructured materials, and this has been experimentally verified. During exploratory synthetic studies of chalcogenide-based bulk thermoelectric materials it was discovered that several compounds spontaneously formed endotaxially embedded nanostructures. These compounds have some of the best known properties for bulk thermoelectric materials in the 500-800 K temperature range. Here we report our continued efforts to better understand the role of the nanostructures while concurrently furthering the development of these new materials (for example n-type lead-antimony-silver-tellurium, and p-type lead-antimony-silver-tin-tellurium) into thermoelectric power-generation devices.",
keywords = "Bulk materials, Nanostructures, Thermoelectrics",
author = "Hogan, {Timothy P.} and Adam Downey and Jarrod Short and Jonathan D'Angelo and Wu, {Chun I.} and Eric Quarez and John Androulakis and Poudeu, {Pierre F P} and Sootsman, {Joseph R.} and Chung, {Duck Young} and Kanatzidis, {Mercouri G} and Mahanti, {S. D.} and Timm, {Edward J.} and Harold Schock and Fei Ren and Jason Johnson and Case, {Eldon D.}",
year = "2007",
month = "7",
doi = "10.1007/s11664-007-0174-9",
language = "English",
volume = "36",
pages = "704--710",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "7",

}

TY - JOUR

T1 - Nanostructured thermoelectric materials and high-efficiency power-generation modules

AU - Hogan, Timothy P.

AU - Downey, Adam

AU - Short, Jarrod

AU - D'Angelo, Jonathan

AU - Wu, Chun I.

AU - Quarez, Eric

AU - Androulakis, John

AU - Poudeu, Pierre F P

AU - Sootsman, Joseph R.

AU - Chung, Duck Young

AU - Kanatzidis, Mercouri G

AU - Mahanti, S. D.

AU - Timm, Edward J.

AU - Schock, Harold

AU - Ren, Fei

AU - Johnson, Jason

AU - Case, Eldon D.

PY - 2007/7

Y1 - 2007/7

N2 - For thermoelectric applications, the best materials have high electrical conductivity and thermopower and, simultaneously, low thermal conductivity. Such a combination of properties is usually found in heavily doped semiconductors. Renewed interest in this topic has followed recent theoretical predictions that significant increases in performance are possible for nanostructured materials, and this has been experimentally verified. During exploratory synthetic studies of chalcogenide-based bulk thermoelectric materials it was discovered that several compounds spontaneously formed endotaxially embedded nanostructures. These compounds have some of the best known properties for bulk thermoelectric materials in the 500-800 K temperature range. Here we report our continued efforts to better understand the role of the nanostructures while concurrently furthering the development of these new materials (for example n-type lead-antimony-silver-tellurium, and p-type lead-antimony-silver-tin-tellurium) into thermoelectric power-generation devices.

AB - For thermoelectric applications, the best materials have high electrical conductivity and thermopower and, simultaneously, low thermal conductivity. Such a combination of properties is usually found in heavily doped semiconductors. Renewed interest in this topic has followed recent theoretical predictions that significant increases in performance are possible for nanostructured materials, and this has been experimentally verified. During exploratory synthetic studies of chalcogenide-based bulk thermoelectric materials it was discovered that several compounds spontaneously formed endotaxially embedded nanostructures. These compounds have some of the best known properties for bulk thermoelectric materials in the 500-800 K temperature range. Here we report our continued efforts to better understand the role of the nanostructures while concurrently furthering the development of these new materials (for example n-type lead-antimony-silver-tellurium, and p-type lead-antimony-silver-tin-tellurium) into thermoelectric power-generation devices.

KW - Bulk materials

KW - Nanostructures

KW - Thermoelectrics

UR - http://www.scopus.com/inward/record.url?scp=34547401937&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547401937&partnerID=8YFLogxK

U2 - 10.1007/s11664-007-0174-9

DO - 10.1007/s11664-007-0174-9

M3 - Article

VL - 36

SP - 704

EP - 710

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 7

ER -