Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

Alexander Tselev, Vinod K. Sangwan, Deep Jariwala, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam, Sergei V. Kalinin

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Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O 3/HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

Original languageEnglish
Article number243105
JournalApplied Physics Letters
Issue number24
Publication statusPublished - Dec 9 2013


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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