Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer

Alexander Tselev, Vinod K. Sangwan, Deep Jariwala, Tobin J Marks, Lincoln J. Lauhon, Mark C Hersam, Sergei V. Kalinin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O 3/HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

Original languageEnglish
Article number243105
JournalApplied Physics Letters
Volume103
Issue number24
DOIs
Publication statusPublished - Dec 9 2013

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inoculation
near fields
graphene
microscopy
microwaves
scanning
oxides
defects
atomic layer epitaxy
oxide films
inhomogeneity
spatial resolution
nucleation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer. / Tselev, Alexander; Sangwan, Vinod K.; Jariwala, Deep; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C; Kalinin, Sergei V.

In: Applied Physics Letters, Vol. 103, No. 24, 243105, 09.12.2013.

Research output: Contribution to journalArticle

Tselev, Alexander ; Sangwan, Vinod K. ; Jariwala, Deep ; Marks, Tobin J ; Lauhon, Lincoln J. ; Hersam, Mark C ; Kalinin, Sergei V. / Near-field microwave microscopy of high-κ oxides grown on graphene with an organic seeding layer. In: Applied Physics Letters. 2013 ; Vol. 103, No. 24.
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