Abstract
We report photocurrent-voltage data for improved n-Si/metal devices using CH3-terminated n-Si(111) and Au nanoparticles (NPs). CH3-terminated Si(111) surfaces maintain good electronic properties throughout device assembly, while the use of Au NPs as precursors to metal films circumvents the standard issues associated with interfacial reactivity of metals in Schottky barrier formation. Such devices demonstrate excellent photovoltaic properties, with photovoltages that approach the maximum values predicted for photodiodes that are limited by Si bulk diffusion/recombination processes rather than interfacial processes. These devices are compared to standard n-Si/Au devices made via thermally evaporated Au films which are well-known to be limited by junction-based recombination.
| Original language | English |
|---|---|
| Pages (from-to) | 3300-3301 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 130 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Mar 19 2008 |
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ASJC Scopus subject areas
- Chemistry(all)
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Near-ideal photodiodes from sintered gold nanoparticle films on methyl-terminated Si(111) surfaces. / Maldonado, Stephen; Knapp, David; Lewis, Nathan S.
In: Journal of the American Chemical Society, Vol. 130, No. 11, 19.03.2008, p. 3300-3301.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Near-ideal photodiodes from sintered gold nanoparticle films on methyl-terminated Si(111) surfaces
AU - Maldonado, Stephen
AU - Knapp, David
AU - Lewis, Nathan S
PY - 2008/3/19
Y1 - 2008/3/19
N2 - We report photocurrent-voltage data for improved n-Si/metal devices using CH3-terminated n-Si(111) and Au nanoparticles (NPs). CH3-terminated Si(111) surfaces maintain good electronic properties throughout device assembly, while the use of Au NPs as precursors to metal films circumvents the standard issues associated with interfacial reactivity of metals in Schottky barrier formation. Such devices demonstrate excellent photovoltaic properties, with photovoltages that approach the maximum values predicted for photodiodes that are limited by Si bulk diffusion/recombination processes rather than interfacial processes. These devices are compared to standard n-Si/Au devices made via thermally evaporated Au films which are well-known to be limited by junction-based recombination.
AB - We report photocurrent-voltage data for improved n-Si/metal devices using CH3-terminated n-Si(111) and Au nanoparticles (NPs). CH3-terminated Si(111) surfaces maintain good electronic properties throughout device assembly, while the use of Au NPs as precursors to metal films circumvents the standard issues associated with interfacial reactivity of metals in Schottky barrier formation. Such devices demonstrate excellent photovoltaic properties, with photovoltages that approach the maximum values predicted for photodiodes that are limited by Si bulk diffusion/recombination processes rather than interfacial processes. These devices are compared to standard n-Si/Au devices made via thermally evaporated Au films which are well-known to be limited by junction-based recombination.
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U2 - 10.1021/ja800603v
DO - 10.1021/ja800603v
M3 - Article
VL - 130
SP - 3300
EP - 3301
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 11
ER -