Near-ideal photodiodes from sintered gold nanoparticle films on methyl-terminated Si(111) surfaces

Stephen Maldonado, David Knapp, Nathan S Lewis

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We report photocurrent-voltage data for improved n-Si/metal devices using CH3-terminated n-Si(111) and Au nanoparticles (NPs). CH3-terminated Si(111) surfaces maintain good electronic properties throughout device assembly, while the use of Au NPs as precursors to metal films circumvents the standard issues associated with interfacial reactivity of metals in Schottky barrier formation. Such devices demonstrate excellent photovoltaic properties, with photovoltages that approach the maximum values predicted for photodiodes that are limited by Si bulk diffusion/recombination processes rather than interfacial processes. These devices are compared to standard n-Si/Au devices made via thermally evaporated Au films which are well-known to be limited by junction-based recombination.

Original languageEnglish
Pages (from-to)3300-3301
Number of pages2
JournalJournal of the American Chemical Society
Volume130
Issue number11
DOIs
Publication statusPublished - Mar 19 2008

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Photodiodes
Gold
Nanoparticles
Metals
Equipment and Supplies
Genetic Recombination
Photocurrents
Electronic properties
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Near-ideal photodiodes from sintered gold nanoparticle films on methyl-terminated Si(111) surfaces. / Maldonado, Stephen; Knapp, David; Lewis, Nathan S.

In: Journal of the American Chemical Society, Vol. 130, No. 11, 19.03.2008, p. 3300-3301.

Research output: Contribution to journalArticle

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