Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C Feldman, Patricia M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages207-212
Number of pages6
Volume1246
Publication statusPublished - 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 5 2010Apr 9 2010

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/5/104/9/10

Fingerprint

Deep level transient spectroscopy
metal oxide semiconductors
Silicon carbide
silicon carbides
capacitors
Capacitors
Capacitance
capacitance
Metals
traps
Electric potential
electric potential
spectroscopy
Nitridation
Electron emission
electron capture
Silicon Dioxide
electron emission
energy
Activation energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Basile, A. F., Dhar, S., Rozen, J., Chen, X., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS. In Materials Research Society Symposium Proceedings (Vol. 1246, pp. 207-212)

Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS. / Basile, Alberto F.; Dhar, Sarit; Rozen, John; Chen, Xudong; Williams, John R.; Feldman, Leonard C; Mooney, Patricia M.

Materials Research Society Symposium Proceedings. Vol. 1246 2010. p. 207-212.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Basile, AF, Dhar, S, Rozen, J, Chen, X, Williams, JR, Feldman, LC & Mooney, PM 2010, Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS. in Materials Research Society Symposium Proceedings. vol. 1246, pp. 207-212, 2010 MRS Spring Meeting, San Francisco, CA, United States, 4/5/10.
Basile AF, Dhar S, Rozen J, Chen X, Williams JR, Feldman LC et al. Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS. In Materials Research Society Symposium Proceedings. Vol. 1246. 2010. p. 207-212
Basile, Alberto F. ; Dhar, Sarit ; Rozen, John ; Chen, Xudong ; Williams, John R. ; Feldman, Leonard C ; Mooney, Patricia M. / Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS. Materials Research Society Symposium Proceedings. Vol. 1246 2010. pp. 207-212
@inproceedings{75eb6eb907c54480adf210ecf1a5864b,
title = "Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS",
abstract = "Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.",
author = "Basile, {Alberto F.} and Sarit Dhar and John Rozen and Xudong Chen and Williams, {John R.} and Feldman, {Leonard C} and Mooney, {Patricia M.}",
year = "2010",
language = "English",
isbn = "9781605112237",
volume = "1246",
pages = "207--212",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

AU - Basile, Alberto F.

AU - Dhar, Sarit

AU - Rozen, John

AU - Chen, Xudong

AU - Williams, John R.

AU - Feldman, Leonard C

AU - Mooney, Patricia M.

PY - 2010

Y1 - 2010

N2 - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

AB - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

UR - http://www.scopus.com/inward/record.url?scp=78650403513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650403513&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781605112237

VL - 1246

SP - 207

EP - 212

BT - Materials Research Society Symposium Proceedings

ER -