Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, Patricia M. Mooney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Original languageEnglish
Title of host publicationSilicon Carbide 2010 - Materials, Processing and Devices
Pages207-212
Number of pages6
Publication statusPublished - Dec 24 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 5 2010Apr 9 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1246
ISSN (Print)0272-9172

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/5/104/9/10

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Basile, A. F., Dhar, S., Rozen, J., Chen, X., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS. In Silicon Carbide 2010 - Materials, Processing and Devices (pp. 207-212). (Materials Research Society Symposium Proceedings; Vol. 1246).