Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

Alberto F. Basile; Sarit Dhar; John Rozen; Xudong Chen; John R. Williams; Leonard C. Feldman; Patricia M. Mooney

Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS

Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, Patricia M. Mooney

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO₂) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Original language	English
Title of host publication	Silicon Carbide 2010 - Materials, Processing and Devices
Pages	207-212
Number of pages	6
Publication status	Published - Dec 24 2010
Event	2010 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 5 2010 → Apr 9 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1246
ISSN (Print)	0272-9172

Other

Other	2010 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	4/5/10 → 4/9/10

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Basile, A. F., Dhar, S., Rozen, J., Chen, X., Williams, J. R., Feldman, L. C., & Mooney, P. M. (2010). Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS. In Silicon Carbide 2010 - Materials, Processing and Devices (pp. 207-212). (Materials Research Society Symposium Proceedings; Vol. 1246).

Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS. / Basile, Alberto F.; Dhar, Sarit; Rozen, John; Chen, Xudong; Williams, John R.; Feldman, Leonard C.; Mooney, Patricia M.

Silicon Carbide 2010 - Materials, Processing and Devices. 2010. p. 207-212 (Materials Research Society Symposium Proceedings; Vol. 1246).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basile, AF, Dhar, S, Rozen, J, Chen, X, Williams, JR, Feldman, LC & Mooney, PM 2010, Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS. in Silicon Carbide 2010 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 1246, pp. 207-212, 2010 MRS Spring Meeting, San Francisco, CA, United States, 4/5/10.

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abstract = "Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.",

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AU - Basile, Alberto F.

AU - Dhar, Sarit

AU - Rozen, John

AU - Chen, Xudong

AU - Williams, John R.

AU - Feldman, Leonard C.

AU - Mooney, Patricia M.

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AB - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

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