TY - GEN
T1 - Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS
AU - Basile, Alberto F.
AU - Dhar, Sarit
AU - Rozen, John
AU - Chen, Xudong
AU - Williams, John R.
AU - Feldman, Leonard C.
AU - Mooney, Patricia M.
PY - 2010/12/24
Y1 - 2010/12/24
N2 - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.
AB - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.
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M3 - Conference contribution
AN - SCOPUS:78650403513
SN - 9781605112237
T3 - Materials Research Society Symposium Proceedings
SP - 207
EP - 212
BT - Silicon Carbide 2010 - Materials, Processing and Devices
T2 - 2010 MRS Spring Meeting
Y2 - 5 April 2010 through 9 April 2010
ER -