Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

Alberto F. Basile; Sarit Dhar; John Rozen; Xudong Chen; John R. Williams; Leonard C. Feldman; Patricia M. Mooney

Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS

Alberto F. Basile, Sarit Dhar, John Rozen, Xudong Chen, John R. Williams, Leonard C. Feldman, Patricia M. Mooney

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO₂) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

Original language	English
Title of host publication	Silicon Carbide 2010 - Materials, Processing and Devices
Pages	207-212
Number of pages	6
Publication status	Published - Dec 24 2010
Event	2010 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 5 2010 → Apr 9 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1246
ISSN (Print)	0272-9172

Other

Other	2010 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	4/5/10 → 4/9/10

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

Fingerprint Dive into the research topics of 'Near-interface traps in n-type SiO<sub>2</sub>/SiC MOS capacitors from energy-resolved CCDLTS'. Together they form a unique fingerprint.

Cite this

Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS. / Basile, Alberto F.; Dhar, Sarit; Rozen, John; Chen, Xudong; Williams, John R.; Feldman, Leonard C.; Mooney, Patricia M.

Silicon Carbide 2010 - Materials, Processing and Devices. 2010. p. 207-212 (Materials Research Society Symposium Proceedings; Vol. 1246).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Basile, AF, Dhar, S, Rozen, J, Chen, X, Williams, JR, Feldman, LC & Mooney, PM 2010, Near-interface traps in n-type SiO₂/SiC MOS capacitors from energy-resolved CCDLTS. in Silicon Carbide 2010 - Materials, Processing and Devices. Materials Research Society Symposium Proceedings, vol. 1246, pp. 207-212, 2010 MRS Spring Meeting, San Francisco, CA, United States, 4/5/10.

@inproceedings{75eb6eb907c54480adf210ecf1a5864b,

title = "Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS",

abstract = "Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.",

author = "Basile, {Alberto F.} and Sarit Dhar and John Rozen and Xudong Chen and Williams, {John R.} and Feldman, {Leonard C.} and Mooney, {Patricia M.}",

year = "2010",

month = dec,

day = "24",

language = "English",

isbn = "9781605112237",

series = "Materials Research Society Symposium Proceedings",

pages = "207--212",

booktitle = "Silicon Carbide 2010 - Materials, Processing and Devices",

note = "2010 MRS Spring Meeting ; Conference date: 05-04-2010 Through 09-04-2010",

}

TY - GEN

T1 - Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS

AU - Basile, Alberto F.

AU - Dhar, Sarit

AU - Rozen, John

AU - Chen, Xudong

AU - Williams, John R.

AU - Feldman, Leonard C.

AU - Mooney, Patricia M.

PY - 2010/12/24

Y1 - 2010/12/24

N2 - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

AB - Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) capacitors, having different nitridation times, were characterized by means of Constant Capacitance Deep Level Transient Spectroscopy (CCDLTS). Electron emission was investigated with respect to the temperature dependence of emission rates and the amplitude of the signal as a function of the filling voltage. The comparison between the emission activation energies of the dominant CCDLTS peaks and the filling voltages, led to the conclusion that the dominant trapping behavior originates in the Silicon-dioxide (SiO2) layer. Moreover, a model of electron capture via tunneling can explain the dependence of the CCDLTS signal on increasing filling voltage.

UR - http://www.scopus.com/inward/record.url?scp=78650403513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650403513&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:78650403513

SN - 9781605112237

T3 - Materials Research Society Symposium Proceedings

SP - 207

EP - 212

BT - Silicon Carbide 2010 - Materials, Processing and Devices

T2 - 2010 MRS Spring Meeting

Y2 - 5 April 2010 through 9 April 2010

ER -