Near diamond island structures on Si(111) were grown by microwave PECVD at low methane concentration and high substrate temperature. The (111) plane isolated diamond islands are well aligned on the substrate with the mosaic distribution of 0.03 FWHM. The high strain in the isolated islands was relieved on contact with other islands.
|Number of pages||3|
|Publication status||Published - Jan 2001|
ASJC Scopus subject areas
- Materials Science(all)