Near perfect heteroepitaxy of diamond islands on Si(111)

X. Liu, J. R. Babcock, M. A. Lane, J. A. Belot, A. W. Ott, M. V. Metz, C. R. Kannewurf, Robert P. H. Chang, Tobin J Marks

Research output: Contribution to journalArticle

Abstract

Near diamond island structures on Si(111) were grown by microwave PECVD at low methane concentration and high substrate temperature. The (111) plane isolated diamond islands are well aligned on the substrate with the mosaic distribution of 0.03 FWHM. The high strain in the isolated islands was relieved on contact with other islands.

Original languageEnglish
Pages (from-to)22-24
Number of pages3
JournalAdvanced Materials
Volume13
Issue number2
Publication statusPublished - Jan 2001

Fingerprint

Diamond
Epitaxial growth
Diamonds
Methane
Substrates
Plasma enhanced chemical vapor deposition
Full width at half maximum
Microwaves
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Liu, X., Babcock, J. R., Lane, M. A., Belot, J. A., Ott, A. W., Metz, M. V., ... Marks, T. J. (2001). Near perfect heteroepitaxy of diamond islands on Si(111). Advanced Materials, 13(2), 22-24.

Near perfect heteroepitaxy of diamond islands on Si(111). / Liu, X.; Babcock, J. R.; Lane, M. A.; Belot, J. A.; Ott, A. W.; Metz, M. V.; Kannewurf, C. R.; Chang, Robert P. H.; Marks, Tobin J.

In: Advanced Materials, Vol. 13, No. 2, 01.2001, p. 22-24.

Research output: Contribution to journalArticle

Liu, X, Babcock, JR, Lane, MA, Belot, JA, Ott, AW, Metz, MV, Kannewurf, CR, Chang, RPH & Marks, TJ 2001, 'Near perfect heteroepitaxy of diamond islands on Si(111)', Advanced Materials, vol. 13, no. 2, pp. 22-24.
Liu X, Babcock JR, Lane MA, Belot JA, Ott AW, Metz MV et al. Near perfect heteroepitaxy of diamond islands on Si(111). Advanced Materials. 2001 Jan;13(2):22-24.
Liu, X. ; Babcock, J. R. ; Lane, M. A. ; Belot, J. A. ; Ott, A. W. ; Metz, M. V. ; Kannewurf, C. R. ; Chang, Robert P. H. ; Marks, Tobin J. / Near perfect heteroepitaxy of diamond islands on Si(111). In: Advanced Materials. 2001 ; Vol. 13, No. 2. pp. 22-24.
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