Neutralization of energetic He ions scattered from clean and Cs-covered Si(100)

R. Haight, Leonard C Feldman, T. M. Buck, W. M. Gibson

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report on a comprehensive study of the neutralization of (75-180)-keV He ions scattered from the UHV-cleaned and Cs-covered Si(100) surface, using surface-sensitive channeling techniques. It is shown that ions are neutralized exclusively at the solid surface on the ion's outward path. Angular depth and work-function dependence results are discussed. A model is proposed which includes resonant transitions to a broadened He n=2 quantum level, and is compared with experimental data.

Original languageEnglish
Pages (from-to)734-740
Number of pages7
JournalPhysical Review B
Volume30
Issue number2
DOIs
Publication statusPublished - 1984

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Ions
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solid surfaces

ASJC Scopus subject areas

  • Condensed Matter Physics

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Neutralization of energetic He ions scattered from clean and Cs-covered Si(100). / Haight, R.; Feldman, Leonard C; Buck, T. M.; Gibson, W. M.

In: Physical Review B, Vol. 30, No. 2, 1984, p. 734-740.

Research output: Contribution to journalArticle

Haight, R. ; Feldman, Leonard C ; Buck, T. M. ; Gibson, W. M. / Neutralization of energetic He ions scattered from clean and Cs-covered Si(100). In: Physical Review B. 1984 ; Vol. 30, No. 2. pp. 734-740.
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