Neutron diffraction study on the defect structure of indium-tin-oxide

Gabriela B. González, Jerome B. Cohen, Jin Ha Hwang, Thomas O Mason, Jason P. Hodges, James D. Jorgensen

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

The defect structure of undoped and Sn-doped In2O3 (ITO) materials was studied by preparing powders under different processing environments and performing neutron powder diffraction. The effect of tin doping and oxygen partial pressure was determined. Structural information was obtained by analyzing neutron powder diffraction data using the Rietveld method. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the interstitial oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites. The tin cations show a strong preference for the b site versus the d site. The measured electrical properties are correlated with the interstitial oxygen populations, which agree with the proposed models for reducible (2SnInO″i)x and nonreducible (2SnIn3OOO″i) x defect clusters.

Original languageEnglish
Pages (from-to)2550-2555
Number of pages6
JournalJournal of Applied Physics
Volume89
Issue number5
DOIs
Publication statusPublished - Mar 1 2001

Fingerprint

indium oxides
tin oxides
neutron diffraction
tin
defects
interstitials
oxygen
cations
neutrons
ITO (semiconductors)
diffraction
partial pressure
electrical properties
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

González, G. B., Cohen, J. B., Hwang, J. H., Mason, T. O., Hodges, J. P., & Jorgensen, J. D. (2001). Neutron diffraction study on the defect structure of indium-tin-oxide. Journal of Applied Physics, 89(5), 2550-2555. https://doi.org/10.1063/1.1341209

Neutron diffraction study on the defect structure of indium-tin-oxide. / González, Gabriela B.; Cohen, Jerome B.; Hwang, Jin Ha; Mason, Thomas O; Hodges, Jason P.; Jorgensen, James D.

In: Journal of Applied Physics, Vol. 89, No. 5, 01.03.2001, p. 2550-2555.

Research output: Contribution to journalArticle

González, GB, Cohen, JB, Hwang, JH, Mason, TO, Hodges, JP & Jorgensen, JD 2001, 'Neutron diffraction study on the defect structure of indium-tin-oxide', Journal of Applied Physics, vol. 89, no. 5, pp. 2550-2555. https://doi.org/10.1063/1.1341209
González, Gabriela B. ; Cohen, Jerome B. ; Hwang, Jin Ha ; Mason, Thomas O ; Hodges, Jason P. ; Jorgensen, James D. / Neutron diffraction study on the defect structure of indium-tin-oxide. In: Journal of Applied Physics. 2001 ; Vol. 89, No. 5. pp. 2550-2555.
@article{bc6d9618266242ad9ea5aef4253a4e56,
title = "Neutron diffraction study on the defect structure of indium-tin-oxide",
abstract = "The defect structure of undoped and Sn-doped In2O3 (ITO) materials was studied by preparing powders under different processing environments and performing neutron powder diffraction. The effect of tin doping and oxygen partial pressure was determined. Structural information was obtained by analyzing neutron powder diffraction data using the Rietveld method. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the interstitial oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites. The tin cations show a strong preference for the b site versus the d site. The measured electrical properties are correlated with the interstitial oxygen populations, which agree with the proposed models for reducible (2Sn•InO″i)x and nonreducible (2Sn•In3OOO″i) x defect clusters.",
author = "Gonz{\'a}lez, {Gabriela B.} and Cohen, {Jerome B.} and Hwang, {Jin Ha} and Mason, {Thomas O} and Hodges, {Jason P.} and Jorgensen, {James D.}",
year = "2001",
month = "3",
day = "1",
doi = "10.1063/1.1341209",
language = "English",
volume = "89",
pages = "2550--2555",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Neutron diffraction study on the defect structure of indium-tin-oxide

AU - González, Gabriela B.

AU - Cohen, Jerome B.

AU - Hwang, Jin Ha

AU - Mason, Thomas O

AU - Hodges, Jason P.

AU - Jorgensen, James D.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - The defect structure of undoped and Sn-doped In2O3 (ITO) materials was studied by preparing powders under different processing environments and performing neutron powder diffraction. The effect of tin doping and oxygen partial pressure was determined. Structural information was obtained by analyzing neutron powder diffraction data using the Rietveld method. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the interstitial oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites. The tin cations show a strong preference for the b site versus the d site. The measured electrical properties are correlated with the interstitial oxygen populations, which agree with the proposed models for reducible (2Sn•InO″i)x and nonreducible (2Sn•In3OOO″i) x defect clusters.

AB - The defect structure of undoped and Sn-doped In2O3 (ITO) materials was studied by preparing powders under different processing environments and performing neutron powder diffraction. The effect of tin doping and oxygen partial pressure was determined. Structural information was obtained by analyzing neutron powder diffraction data using the Rietveld method. The results include positions of the atoms, their thermal displacements, the fractional occupancy of the interstitial oxygen site, and the fractional occupancies of Sn on each of the two nonequivalent cation sites. The tin cations show a strong preference for the b site versus the d site. The measured electrical properties are correlated with the interstitial oxygen populations, which agree with the proposed models for reducible (2Sn•InO″i)x and nonreducible (2Sn•In3OOO″i) x defect clusters.

UR - http://www.scopus.com/inward/record.url?scp=0038600019&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038600019&partnerID=8YFLogxK

U2 - 10.1063/1.1341209

DO - 10.1063/1.1341209

M3 - Article

AN - SCOPUS:0038600019

VL - 89

SP - 2550

EP - 2555

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -