New generation of flexible GHz graphene transistor

Henri Happy, Cedric Sire, Florence Ardiaca, Sylvie Lepilliet, Jung Woo T Seo, Mark C Hersam, Gilles Dambrine, Vincent Derycke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Flexible organic electronic holds today promise of a new class of devices which offer possibility of large scale manufacturing, low cost, lightweight and mechanical flexibility. But combining high speed, high functionality and compatibility with plastic substrates is particularly challenging. Today, one estimates that carbon allotropes such as carbon nanotube and graphene combine all the necessary properties to meet this challenging goal. In particular, graphene material exhibits the very high carrier mobility allows targeting high frequency circuits on flexible substrate. Our graphene transistors fabricated using solution-based graphene show extrinsic current gain cutoff frequencies of 2.2 GHz and power gain cutoff frequencies of 550 MHz.

Original languageEnglish
Title of host publicationProceedings of the International Display Workshops
Pages235-236
Number of pages2
Volume1
Publication statusPublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: Dec 4 2012Dec 7 2012

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12/4/1212/7/12

Fingerprint

Graphite
Graphene
Cutoff frequency
Carbon Nanotubes
Carrier mobility
Substrates
Carbon nanotubes
Carbon
Plastics
Networks (circuits)
Costs and Cost Analysis
Equipment and Supplies
Graphene transistors
Costs

Keywords

  • Flexible electronics
  • Graphene
  • High-frequency
  • Single-layer
  • Solution-based
  • Transistor

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Happy, H., Sire, C., Ardiaca, F., Lepilliet, S., Seo, J. W. T., Hersam, M. C., ... Derycke, V. (2012). New generation of flexible GHz graphene transistor. In Proceedings of the International Display Workshops (Vol. 1, pp. 235-236)

New generation of flexible GHz graphene transistor. / Happy, Henri; Sire, Cedric; Ardiaca, Florence; Lepilliet, Sylvie; Seo, Jung Woo T; Hersam, Mark C; Dambrine, Gilles; Derycke, Vincent.

Proceedings of the International Display Workshops. Vol. 1 2012. p. 235-236.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Happy, H, Sire, C, Ardiaca, F, Lepilliet, S, Seo, JWT, Hersam, MC, Dambrine, G & Derycke, V 2012, New generation of flexible GHz graphene transistor. in Proceedings of the International Display Workshops. vol. 1, pp. 235-236, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 12/4/12.
Happy H, Sire C, Ardiaca F, Lepilliet S, Seo JWT, Hersam MC et al. New generation of flexible GHz graphene transistor. In Proceedings of the International Display Workshops. Vol. 1. 2012. p. 235-236
Happy, Henri ; Sire, Cedric ; Ardiaca, Florence ; Lepilliet, Sylvie ; Seo, Jung Woo T ; Hersam, Mark C ; Dambrine, Gilles ; Derycke, Vincent. / New generation of flexible GHz graphene transistor. Proceedings of the International Display Workshops. Vol. 1 2012. pp. 235-236
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