New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films

Andrew W. Metz; John R. Ireland; Jun Ni; Kenneth R Poeppelmeier; Carl R. Kannewurf; Tobin J Marks

New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films

Andrew W. Metz, John R. Ireland, Jun Ni, Kenneth R Poeppelmeier, Carl R. Kannewurf, Tobin J Marks

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)₂(N,N-DE-N′,N′-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	P.W. DeHaven, D.P. Field, S.D. Harkness IV, J.A. Sutliff, J.A. Szpunar, L Tang, T Thomson, M.D. Vaudin
Pages	165-170
Number of pages	6
Volume	721
Publication status	Published - 2002
Event	Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States Duration: Apr 1 2002 → Apr 4 2002

Other

Other	Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage
Country	United States
City	San Francisco
Period	4/1/02 → 4/4/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Metz, A. W., Ireland, J. R., Ni, J., Poeppelmeier, K. R., Kannewurf, C. R., & Marks, T. J. (2002). New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films. In P. W. DeHaven, D. P. Field, S. D. Harkness IV, J. A. Sutliff, J. A. Szpunar, L. Tang, T. Thomson, & M. D. Vaudin (Eds.), Materials Research Society Symposium - Proceedings (Vol. 721, pp. 165-170)

New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films. / Metz, Andrew W.; Ireland, John R.; Ni, Jun; Poeppelmeier, Kenneth R; Kannewurf, Carl R.; Marks, Tobin J.

Materials Research Society Symposium - Proceedings. ed. / P.W. DeHaven; D.P. Field; S.D. Harkness IV; J.A. Sutliff; J.A. Szpunar; L Tang; T Thomson; M.D. Vaudin. Vol. 721 2002. p. 165-170.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Metz, AW, Ireland, JR, Ni, J, Poeppelmeier, KR, Kannewurf, CR & Marks, TJ 2002, New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films. in PW DeHaven, DP Field, SD Harkness IV, JA Sutliff, JA Szpunar, L Tang, T Thomson & MD Vaudin (eds), Materials Research Society Symposium - Proceedings. vol. 721, pp. 165-170, Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage, San Francisco, United States, 4/1/02.

Metz, Andrew W. ; Ireland, John R. ; Ni, Jun ; Poeppelmeier, Kenneth R ; Kannewurf, Carl R. ; Marks, Tobin J. / New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films. Materials Research Society Symposium - Proceedings. editor / P.W. DeHaven ; D.P. Field ; S.D. Harkness IV ; J.A. Sutliff ; J.A. Szpunar ; L Tang ; T Thomson ; M.D. Vaudin. Vol. 721 2002. pp. 165-170

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title = "New low-melting cadmium precursors for the detailed study of texture effects in MOCVD derived CdO thin-films",

abstract = "A new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)2(N,N-DE-N′,N′-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.",

author = "Metz, {Andrew W.} and Ireland, {John R.} and Jun Ni and Poeppelmeier, {Kenneth R} and Kannewurf, {Carl R.} and Marks, {Tobin J}",

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N2 - A new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)2(N,N-DE-N′,N′-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.

AB - A new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)2(N,N-DE-N′,N′-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.

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