Abstract
A new series of low-melting, highly volatile, thermally and air-stable cadmium MOCVD precursors have been synthesized and characterized. Cd(hfa)2(N,N-DE-N′,N′-DMEDA) has been successfully utilized in the growth of highly conductive and transparent CdO thin films. Hall measurements conducted on films deposited simultaneously on MgO (100) single crystal and Corning 1737F glass substrates reveal that the films on MgO have significantly enhanced carrier mobilities. Owing to similar grain sizes and carrier concentrations we attribute this effect to improved texture and associated improvements crystalline order. Conductivities as high as 8,590 S/cm are obtained which is to our knowledge the highest value reported to date for CdO films without aliovalent dopants.
Original language | English |
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Pages (from-to) | 165-170 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 721 |
DOIs | |
Publication status | Published - 2002 |
Event | Magnetic and Electronic Films - Microstructure, Texture and Application to Data Storage - San Francisco, United States Duration: Apr 1 2002 → Apr 4 2002 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering