New Materials for Superconducting Electronics: Epitaxial Growth of LaSrGaO4 and PrSrGaO4 Dielectric Thin Films by MOCVD

John A. Belot, Bruce J. Hinds, Jun Chen, Yun Yu Wang, Vinayak Dravid, Tobin J Marks

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalChemical Vapor Deposition
Volume3
Issue number2
Publication statusPublished - Mar 1997

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Praseodymium compounds
praseodymium compounds
Lanthanum compounds
lanthanum compounds
Dielectric films
High temperature superconductors
Metallorganic chemical vapor deposition
Epitaxial growth
high temperature superconductors
Crystal orientation
Perovskite
metalorganic chemical vapor deposition
Chemical vapor deposition
surface roughness
Permittivity
Electronic equipment
Surface roughness
vapor deposition
permittivity
Thin films

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

New Materials for Superconducting Electronics : Epitaxial Growth of LaSrGaO4 and PrSrGaO4 Dielectric Thin Films by MOCVD. / Belot, John A.; Hinds, Bruce J.; Chen, Jun; Wang, Yun Yu; Dravid, Vinayak; Marks, Tobin J.

In: Chemical Vapor Deposition, Vol. 3, No. 2, 03.1997, p. 78-81.

Research output: Contribution to journalArticle

Belot, John A. ; Hinds, Bruce J. ; Chen, Jun ; Wang, Yun Yu ; Dravid, Vinayak ; Marks, Tobin J. / New Materials for Superconducting Electronics : Epitaxial Growth of LaSrGaO4 and PrSrGaO4 Dielectric Thin Films by MOCVD. In: Chemical Vapor Deposition. 1997 ; Vol. 3, No. 2. pp. 78-81.
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