Ni on Si(111): Reactivity and interface structure

N. W. Cheung, R. J. Culbertson, Leonard C Feldman, P. J. Silverman, K. W. West, J. W. Mayer

Research output: Contribution to journalArticle

82 Citations (Scopus)

Abstract

The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

Original languageEnglish
Pages (from-to)120-124
Number of pages5
JournalPhysical Review Letters
Volume45
Issue number2
DOIs
Publication statusPublished - 1980

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reactivity
ambient temperature
temperature dependence
kinetics
metals
atoms
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Cheung, N. W., Culbertson, R. J., Feldman, L. C., Silverman, P. J., West, K. W., & Mayer, J. W. (1980). Ni on Si(111): Reactivity and interface structure. Physical Review Letters, 45(2), 120-124. https://doi.org/10.1103/PhysRevLett.45.120

Ni on Si(111) : Reactivity and interface structure. / Cheung, N. W.; Culbertson, R. J.; Feldman, Leonard C; Silverman, P. J.; West, K. W.; Mayer, J. W.

In: Physical Review Letters, Vol. 45, No. 2, 1980, p. 120-124.

Research output: Contribution to journalArticle

Cheung, NW, Culbertson, RJ, Feldman, LC, Silverman, PJ, West, KW & Mayer, JW 1980, 'Ni on Si(111): Reactivity and interface structure', Physical Review Letters, vol. 45, no. 2, pp. 120-124. https://doi.org/10.1103/PhysRevLett.45.120
Cheung, N. W. ; Culbertson, R. J. ; Feldman, Leonard C ; Silverman, P. J. ; West, K. W. ; Mayer, J. W. / Ni on Si(111) : Reactivity and interface structure. In: Physical Review Letters. 1980 ; Vol. 45, No. 2. pp. 120-124.
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