Ni on Si(111): Reactivity and interface structure

N. W. Cheung, R. J. Culbertson, Leonard C Feldman, P. J. Silverman, K. W. West, J. W. Mayer

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Abstract

The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

Original languageEnglish
Pages (from-to)120-124
Number of pages5
JournalPhysical Review Letters
Volume45
Issue number2
DOIs
Publication statusPublished - 1980

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Cheung, N. W., Culbertson, R. J., Feldman, L. C., Silverman, P. J., West, K. W., & Mayer, J. W. (1980). Ni on Si(111): Reactivity and interface structure. Physical Review Letters, 45(2), 120-124. https://doi.org/10.1103/PhysRevLett.45.120