Nickel diffusion and silicide island formation on silicon (111)

J. T. Mayer, Eric Garfunkel

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.

Original languageEnglish
Pages (from-to)275-283
Number of pages9
JournalNanostructured Materials
Volume4
Issue number3
DOIs
Publication statusPublished - 1994

Fingerprint

Silicon
Nickel
Condensation
nickel
Surface segregation
liquid phases
Liquids
Growth temperature
silicon
condensation
Silicon wafers
Crystallites
Atomic force microscopy
Crystalline materials
Temperature
crystallites
atomic force microscopy
wafers
nickel silicide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Nickel diffusion and silicide island formation on silicon (111). / Mayer, J. T.; Garfunkel, Eric.

In: Nanostructured Materials, Vol. 4, No. 3, 1994, p. 275-283.

Research output: Contribution to journalArticle

@article{6aadaa6e3414455291252a11df969c0d,
title = "Nickel diffusion and silicide island formation on silicon (111)",
abstract = "Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.",
author = "Mayer, {J. T.} and Eric Garfunkel",
year = "1994",
doi = "10.1016/0965-9773(94)90137-6",
language = "English",
volume = "4",
pages = "275--283",
journal = "Nanostructured Materials",
issn = "0965-9773",
publisher = "Pergamon Press Ltd.",
number = "3",

}

TY - JOUR

T1 - Nickel diffusion and silicide island formation on silicon (111)

AU - Mayer, J. T.

AU - Garfunkel, Eric

PY - 1994

Y1 - 1994

N2 - Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.

AB - Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.

UR - http://www.scopus.com/inward/record.url?scp=0028442015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028442015&partnerID=8YFLogxK

U2 - 10.1016/0965-9773(94)90137-6

DO - 10.1016/0965-9773(94)90137-6

M3 - Article

VL - 4

SP - 275

EP - 283

JO - Nanostructured Materials

JF - Nanostructured Materials

SN - 0965-9773

IS - 3

ER -