TY - JOUR
T1 - Nickel diffusion and silicide island formation on silicon (111)
AU - Mayer, J. T.
AU - Garfunkel, E.
N1 - Funding Information:
The authors wish to acknowledge the National Science Foundation, DMR 93-06899 and the NJ SCOE for partial support of this work We also wish to thank Professor R. F. Lin for his help and thoughtful comments.
PY - 1994
Y1 - 1994
N2 - Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.
AB - Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.
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U2 - 10.1016/0965-9773(94)90137-6
DO - 10.1016/0965-9773(94)90137-6
M3 - Article
AN - SCOPUS:0028442015
VL - 4
SP - 275
EP - 283
JO - Nanostructured Materials
JF - Nanostructured Materials
SN - 0965-9773
IS - 3
ER -