Nickel diffusion and silicide island formation on silicon (111)

J. T. Mayer; E. Garfunkel

doi:10.1016/0965-9773(94)90137-6

Nickel diffusion and silicide island formation on silicon (111)

J. T. Mayer, E. Garfunkel

Rutgers University

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi_2-x liquid phase at the surface. Condensation from the liquid phase to NiSi₂ is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.

Original language	English
Pages (from-to)	275-283
Number of pages	9
Journal	Nanostructured Materials
Volume	4
Issue number	3
DOIs	https://doi.org/10.1016/0965-9773(94)90137-6
Publication status	Published - Jan 1 1994

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

Cite this

Mayer, J. T., & Garfunkel, E. (1994). Nickel diffusion and silicide island formation on silicon (111). Nanostructured Materials, 4(3), 275-283. https://doi.org/10.1016/0965-9773(94)90137-6

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10.1016/0965-9773(94)90137-6