Abstract
Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.
| Original language | English |
|---|---|
| Pages (from-to) | 275-283 |
| Number of pages | 9 |
| Journal | Nanostructured Materials |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1994 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Nickel diffusion and silicide island formation on silicon (111). / Mayer, J. T.; Garfunkel, Eric.
In: Nanostructured Materials, Vol. 4, No. 3, 1994, p. 275-283.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nickel diffusion and silicide island formation on silicon (111)
AU - Mayer, J. T.
AU - Garfunkel, Eric
PY - 1994
Y1 - 1994
N2 - Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.
AB - Crystalline nickel disilicide islands have been observed on the Si(111) surface by atomic force microscopy (AFM). The nickel disilicide islands coalesce following a high temperature anneal (≈1260K). The islands differ from those formed at lower temperature in both shape and orientation. To explain the differences, we discuss kinetically limited growth accompanying phase and surface segregation of Ni from the bulk silicon wafer, and condensation of a Ni-rich NiSi2-x liquid phase at the surface. Condensation from the liquid phase to NiSi2 is concluded to be responsible for the structure of the crystallites. High temperature growth conditions lead preferentially to A-type (non-twinned) silicide structures.
UR - http://www.scopus.com/inward/record.url?scp=0028442015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0028442015&partnerID=8YFLogxK
U2 - 10.1016/0965-9773(94)90137-6
DO - 10.1016/0965-9773(94)90137-6
M3 - Article
AN - SCOPUS:0028442015
VL - 4
SP - 275
EP - 283
JO - Nanostructured Materials
JF - Nanostructured Materials
SN - 0965-9773
IS - 3
ER -