Nitridation anisotropy in SiO2 4H-SiC

S. Dhar, L. C. Feldman, K. C. Chang, Y. Cao, L. M. Porter, J. Bentley, J. R. Williams

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Nitrogen incorporation at the SiO2 SiC interface due to annealing in NO is measured and shown to be a strong function of crystal face. The annealing process involves two major solid-state chemical reactions: nitrogen uptake at the interface and N loss associated with second-order oxidation. An ad hoc kinetics model explains the experimental observations of anisotropy and nitrogen saturation.

Original languageEnglish
Article number074902
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - Apr 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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