Nitridation anisotropy in SiO2 4H-SiC

S. Dhar, Leonard C Feldman, K. C. Chang, Y. Cao, L. M. Porter, J. Bentley, J. R. Williams

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Nitrogen incorporation at the SiO2 SiC interface due to annealing in NO is measured and shown to be a strong function of crystal face. The annealing process involves two major solid-state chemical reactions: nitrogen uptake at the interface and N loss associated with second-order oxidation. An ad hoc kinetics model explains the experimental observations of anisotropy and nitrogen saturation.

Original languageEnglish
Article number074902
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
Publication statusPublished - Apr 1 2005

Fingerprint

nitrogen
anisotropy
annealing
chemical reactions
solid state
saturation
oxidation
kinetics
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Dhar, S., Feldman, L. C., Chang, K. C., Cao, Y., Porter, L. M., Bentley, J., & Williams, J. R. (2005). Nitridation anisotropy in SiO2 4H-SiC. Journal of Applied Physics, 97(7), [074902]. https://doi.org/10.1063/1.1863423

Nitridation anisotropy in SiO2 4H-SiC. / Dhar, S.; Feldman, Leonard C; Chang, K. C.; Cao, Y.; Porter, L. M.; Bentley, J.; Williams, J. R.

In: Journal of Applied Physics, Vol. 97, No. 7, 074902, 01.04.2005.

Research output: Contribution to journalArticle

Dhar, S, Feldman, LC, Chang, KC, Cao, Y, Porter, LM, Bentley, J & Williams, JR 2005, 'Nitridation anisotropy in SiO2 4H-SiC', Journal of Applied Physics, vol. 97, no. 7, 074902. https://doi.org/10.1063/1.1863423
Dhar S, Feldman LC, Chang KC, Cao Y, Porter LM, Bentley J et al. Nitridation anisotropy in SiO2 4H-SiC. Journal of Applied Physics. 2005 Apr 1;97(7). 074902. https://doi.org/10.1063/1.1863423
Dhar, S. ; Feldman, Leonard C ; Chang, K. C. ; Cao, Y. ; Porter, L. M. ; Bentley, J. ; Williams, J. R. / Nitridation anisotropy in SiO2 4H-SiC. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 7.
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