Nitridation anisotropy in SiO2 4H-SiC

S. Dhar, L. C. Feldman, K. C. Chang, Y. Cao, L. M. Porter, J. Bentley, J. R. Williams

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Abstract

Nitrogen incorporation at the SiO2 SiC interface due to annealing in NO is measured and shown to be a strong function of crystal face. The annealing process involves two major solid-state chemical reactions: nitrogen uptake at the interface and N loss associated with second-order oxidation. An ad hoc kinetics model explains the experimental observations of anisotropy and nitrogen saturation.

Original languageEnglish
Article number074902
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
Publication statusPublished - Apr 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Dhar, S., Feldman, L. C., Chang, K. C., Cao, Y., Porter, L. M., Bentley, J., & Williams, J. R. (2005). Nitridation anisotropy in SiO2 4H-SiC. Journal of Applied Physics, 97(7), [074902]. https://doi.org/10.1063/1.1863423