Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection

Xingguang Zhu, Hang Dong Lee, Tian Feng, John Rozen, Ayayi C. Ahyi, Zengjun Chen, Minyu Li, Tamara Issac-Smith, John R. Williams, Torgny Gustafsson, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - Dec 1 2009
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: Dec 9 2009Dec 11 2009

Publication series

Name2009 International Semiconductor Device Research Symposium, ISDRS '09

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period12/9/0912/11/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhu, X., Lee, H. D., Feng, T., Rozen, J., Ahyi, A. C., Chen, Z., Li, M., Issac-Smith, T., Williams, J. R., Gustafsson, T., & Feldman, L. C. (2009). Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378186] (2009 International Semiconductor Device Research Symposium, ISDRS '09). https://doi.org/10.1109/ISDRS.2009.5378186