Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection

Xingguang Zhu, Hang Dong Lee, Tian Feng, John Rozen, Ayayi C. Ahyi, Zengjun Chen, Minyu Li, Tamara Issac-Smith, John R. Williams, Torgny Gustafsson, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs
Publication statusPublished - 2009
Event2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States
Duration: Dec 9 2009Dec 11 2009

Other

Other2009 International Semiconductor Device Research Symposium, ISDRS '09
CountryUnited States
CityCollege Park, MD
Period12/9/0912/11/09

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Nitridation
Plasmas
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhu, X., Lee, H. D., Feng, T., Rozen, J., Ahyi, A. C., Chen, Z., ... Feldman, L. C. (2009). Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection. In 2009 International Semiconductor Device Research Symposium, ISDRS '09 [5378186] https://doi.org/10.1109/ISDRS.2009.5378186

Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection. / Zhu, Xingguang; Lee, Hang Dong; Feng, Tian; Rozen, John; Ahyi, Ayayi C.; Chen, Zengjun; Li, Minyu; Issac-Smith, Tamara; Williams, John R.; Gustafsson, Torgny; Feldman, Leonard C.

2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378186.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhu, X, Lee, HD, Feng, T, Rozen, J, Ahyi, AC, Chen, Z, Li, M, Issac-Smith, T, Williams, JR, Gustafsson, T & Feldman, LC 2009, Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378186, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 12/9/09. https://doi.org/10.1109/ISDRS.2009.5378186
Zhu X, Lee HD, Feng T, Rozen J, Ahyi AC, Chen Z et al. Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection. In 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378186 https://doi.org/10.1109/ISDRS.2009.5378186
Zhu, Xingguang ; Lee, Hang Dong ; Feng, Tian ; Rozen, John ; Ahyi, Ayayi C. ; Chen, Zengjun ; Li, Minyu ; Issac-Smith, Tamara ; Williams, John R. ; Gustafsson, Torgny ; Feldman, Leonard C. / Nitridation of the 4H-SiC/oxide interface via NO anneal and plasma injection. 2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009.
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author = "Xingguang Zhu and Lee, {Hang Dong} and Tian Feng and John Rozen and Ahyi, {Ayayi C.} and Zengjun Chen and Minyu Li and Tamara Issac-Smith and Williams, {John R.} and Torgny Gustafsson and Feldman, {Leonard C}",
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