Nitridation of the SiO                         2                         /4H-SiC interface studied by surface-enhanced Raman spectroscopy

S. H. Choi; D. Wang; J. R. Williams; M. Park; W. Lu; S. Dhar; L. C. Feldman

doi:10.1016/j.apsusc.2006.12.021

Nitridation of the SiO ₂ /4H-SiC interface studied by surface-enhanced Raman spectroscopy

S. H. Choi, D. Wang, J. R. Williams, M. Park, W. Lu, S. Dhar, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO ₂ /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.

Original language	English
Pages (from-to)	5411-5414
Number of pages	4
Journal	Applied Surface Science
Volume	253
Issue number	12
DOIs	https://doi.org/10.1016/j.apsusc.2006.12.021
Publication status	Published - Apr 15 2007

Keywords

4H-SiC
SERS

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2006.12.021

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Nitridation of the SiO ₂ /4H-SiC interface studied by surface-enhanced Raman spectroscopy . / Choi, S. H.; Wang, D.; Williams, J. R.; Park, M.; Lu, W.; Dhar, S.; Feldman, L. C.

In: Applied Surface Science, Vol. 253, No. 12, 15.04.2007, p. 5411-5414.

Research output: Contribution to journal › Article › peer-review

@article{25768fae5c2343c4839b61096f134bbc,

title = " Nitridation of the SiO 2 /4H-SiC interface studied by surface-enhanced Raman spectroscopy ",

abstract = " We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO 2 /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.",

keywords = "4H-SiC, SERS",

author = "Choi, {S. H.} and D. Wang and Williams, {J. R.} and M. Park and W. Lu and S. Dhar and Feldman, {L. C.}",

note = "Funding Information: This work has been supported by DARPA Contract and by IT Scholarship Program supervised by Institute for Information Technology Advancement (IITA) and Ministry of Information and Communication (MIC), Republic of Korea. Portions of the work performed at Auburn University were partially supported by USDA.",

year = "2007",

month = apr,

day = "15",

doi = "10.1016/j.apsusc.2006.12.021",

language = "English",

volume = "253",

pages = "5411--5414",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "12",

}

TY - JOUR

T1 - Nitridation of the SiO 2 /4H-SiC interface studied by surface-enhanced Raman spectroscopy

AU - Choi, S. H.

AU - Wang, D.

AU - Williams, J. R.

AU - Park, M.

AU - Lu, W.

AU - Dhar, S.

AU - Feldman, L. C.

N1 - Funding Information: This work has been supported by DARPA Contract and by IT Scholarship Program supervised by Institute for Information Technology Advancement (IITA) and Ministry of Information and Communication (MIC), Republic of Korea. Portions of the work performed at Auburn University were partially supported by USDA.

PY - 2007/4/15

Y1 - 2007/4/15

N2 - We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO 2 /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.

AB - We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO 2 /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.

KW - 4H-SiC

KW - SERS

UR - http://www.scopus.com/inward/record.url?scp=33847669732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847669732&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2006.12.021

DO - 10.1016/j.apsusc.2006.12.021

M3 - Article

AN - SCOPUS:33847669732

VL - 253

SP - 5411

EP - 5414

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 12

ER -