Abstract
We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO 2 /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.
Original language | English |
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Pages (from-to) | 5411-5414 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 253 |
Issue number | 12 |
DOIs | |
Publication status | Published - Apr 15 2007 |
Keywords
- 4H-SiC
- SERS
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films