Nitridation of the SiO 2 /4H-SiC interface studied by surface-enhanced Raman spectroscopy

S. H. Choi, D. Wang, J. R. Williams, M. Park, W. Lu, S. Dhar, L. C. Feldman

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO 2 /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.

Original languageEnglish
Pages (from-to)5411-5414
Number of pages4
JournalApplied Surface Science
Volume253
Issue number12
DOIs
Publication statusPublished - Apr 15 2007

Keywords

  • 4H-SiC
  • SERS

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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