Abstract
We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO 2 /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.
| Original language | English |
|---|---|
| Pages (from-to) | 5411-5414 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 253 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Apr 15 2007 |
Keywords
- 4H-SiC
- SERS
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Choi, S. H., Wang, D., Williams, J. R., Park, M., Lu, W., Dhar, S., & Feldman, L. C. (2007). Nitridation of the SiO 2 /4H-SiC interface studied by surface-enhanced Raman spectroscopy Applied Surface Science, 253(12), 5411-5414. https://doi.org/10.1016/j.apsusc.2006.12.021