Nitridation of the SiO                         2                         /4H-SiC interface studied by surface-enhanced Raman spectroscopy

S. H. Choi; D. Wang; J. R. Williams; M. Park; W. Lu; S. Dhar; L. C. Feldman

doi:10.1016/j.apsusc.2006.12.021

Nitridation of the SiO ₂ /4H-SiC interface studied by surface-enhanced Raman spectroscopy

S. H. Choi, D. Wang, J. R. Williams, M. Park, W. Lu, S. Dhar, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO ₂ /4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.

Original language	English
Pages (from-to)	5411-5414
Number of pages	4
Journal	Applied Surface Science
Volume	253
Issue number	12
DOIs	https://doi.org/10.1016/j.apsusc.2006.12.021
Publication status	Published - Apr 15 2007

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Keywords

4H-SiC
SERS

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

Choi, S. H., Wang, D., Williams, J. R., Park, M., Lu, W., Dhar, S., & Feldman, L. C. (2007). Nitridation of the SiO ₂ /4H-SiC interface studied by surface-enhanced Raman spectroscopy Applied Surface Science, 253(12), 5411-5414. https://doi.org/10.1016/j.apsusc.2006.12.021

Nitridation of the SiO ₂ /4H-SiC interface studied by surface-enhanced Raman spectroscopy . / Choi, S. H.; Wang, D.; Williams, J. R.; Park, M.; Lu, W.; Dhar, S.; Feldman, L. C.

In: Applied Surface Science, Vol. 253, No. 12, 15.04.2007, p. 5411-5414.

Research output: Contribution to journal › Article

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Access to Document

10.1016/j.apsusc.2006.12.021