Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy

S. H. Choi, D. Wang, J. R. Williams, M. Park, W. Lu, S. Dhar, Leonard C Feldman

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO2/4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.

Original languageEnglish
Pages (from-to)5411-5414
Number of pages4
JournalApplied Surface Science
Volume253
Issue number12
DOIs
Publication statusPublished - Apr 15 2007

Fingerprint

Nitridation
Raman spectroscopy
Carbon clusters
Interface states
carbon
Nitrogen
Carbon
nitrogen

Keywords

  • 4H-SiC
  • SERS

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy. / Choi, S. H.; Wang, D.; Williams, J. R.; Park, M.; Lu, W.; Dhar, S.; Feldman, Leonard C.

In: Applied Surface Science, Vol. 253, No. 12, 15.04.2007, p. 5411-5414.

Research output: Contribution to journalArticle

Choi, S. H. ; Wang, D. ; Williams, J. R. ; Park, M. ; Lu, W. ; Dhar, S. ; Feldman, Leonard C. / Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy. In: Applied Surface Science. 2007 ; Vol. 253, No. 12. pp. 5411-5414.
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