Nitroacetylacetone as a Cofuel for the Combustion Synthesis of High-Performance Indium-Gallium-Zinc Oxide Transistors

Yao Chen, Binghao Wang, Wei Huang, Xinan Zhang, Gang Wang, Matthew J. Leonardi, Yan Huang, Zhiyun Lu, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Thin-film combustion synthesis has been utilized for the fabrication of solution processed high-performance metal-oxide thin-film transistors (MOTFTs) at lower temperatures than conventional sol-gel processes. The fuel-oxidizer ensemble in the MO precursor solution/film plays an important role in achieving high-efficiency and low-residual combustion byproducts. However, unlike conventional bulk combustion, only a very limited number of thin-film fuels have been investigated. Here we report the use of an efficient new cofuel, 3-nitroacetylacetone (NAcAcH), incorporating a -NO2 group, for the combustion synthesis of display-relevant indium-gallium-zinc-oxide (IGZO) thin films. Compared to the traditional acetylacetone (AcAcH) fuel, a higher enthalpy of combustion (988.6 vs 784.4 J/g) and a lower ignition temperature (107.8 vs 166.5 °C) are achieved for NAcAcH-based formulations. The resulting NAcAcH-derived IGZO TFTs exhibit far higher average electron mobilities (5.7 cm2 V-1 s-1) than AcAcH-derived TFTs (2.7 cm2 V-1 s-1). More importantly, when combining AcAcH with NAcAcH as cofuels in an optimal molar ratio of 1.5:0.5, an even larger TFT electron mobility (7.5 cm2 V-1 s-1) and more stable devices are achieved. Comprehensive IGZO precursor/film analysis and characterization by differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffraction (GIXRD), and X-ray reflectivity (XRR) explain the basis of the film microstructure and TFT performance trends.

Original languageEnglish
Pages (from-to)3323-3329
Number of pages7
JournalChemistry of Materials
Volume30
Issue number10
DOIs
Publication statusPublished - May 22 2018

Fingerprint

Zinc Oxide
Gallium
Combustion synthesis
Indium
Zinc oxide
Transistors
Electron mobility
Thin films
Oxide films
Thin film transistors
Sol-gel process
Byproducts
Ignition
Thermogravimetric analysis
Differential scanning calorimetry
Enthalpy
X ray photoelectron spectroscopy
Metals
Display devices
Fabrication

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Nitroacetylacetone as a Cofuel for the Combustion Synthesis of High-Performance Indium-Gallium-Zinc Oxide Transistors. / Chen, Yao; Wang, Binghao; Huang, Wei; Zhang, Xinan; Wang, Gang; Leonardi, Matthew J.; Huang, Yan; Lu, Zhiyun; Marks, Tobin J; Facchetti, Antonio.

In: Chemistry of Materials, Vol. 30, No. 10, 22.05.2018, p. 3323-3329.

Research output: Contribution to journalArticle

Chen, Y, Wang, B, Huang, W, Zhang, X, Wang, G, Leonardi, MJ, Huang, Y, Lu, Z, Marks, TJ & Facchetti, A 2018, 'Nitroacetylacetone as a Cofuel for the Combustion Synthesis of High-Performance Indium-Gallium-Zinc Oxide Transistors', Chemistry of Materials, vol. 30, no. 10, pp. 3323-3329. https://doi.org/10.1021/acs.chemmater.8b00663
Chen, Yao ; Wang, Binghao ; Huang, Wei ; Zhang, Xinan ; Wang, Gang ; Leonardi, Matthew J. ; Huang, Yan ; Lu, Zhiyun ; Marks, Tobin J ; Facchetti, Antonio. / Nitroacetylacetone as a Cofuel for the Combustion Synthesis of High-Performance Indium-Gallium-Zinc Oxide Transistors. In: Chemistry of Materials. 2018 ; Vol. 30, No. 10. pp. 3323-3329.
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AU - Wang, Gang

AU - Leonardi, Matthew J.

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