Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface

S. Dhar, S. Wang, A. C. Ahyi, T. Isaacs-Smith, S. T. Pantelides, J. R. Williams, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

Post-oxidation anneals that introduce nitrogen at the SiO 2/4H-SiC interface have been most effective in reducing the large interface trap density near the 4H-SiC conduction band-edge for (0001) Si face 4H-SiC Herein, we report the effect of nitridation on interfaces created on the (11 20) a-face and the (0001) C-face of 4H-SiC Significant reductions in trap density (from >1012 cm-2 eV-1 to ∼ 1012 cm-2 eV-1 at Ec-E -0.1 eV) were observed for these different interfaces, indicating the presence of substantial nitrogen susceptible defects for all crystal faces. Annealing nitridated interfaces in hydrogen results in a further reduction of trap density (from ∼1012 cm-2 eV-1 to ∼5 × 10 11 cm-2 eV-1 at Ec-E -0.1 eV). Using sequential anneals in NO and H2, maximum field effect mobilities of ∼55 cm-2 V-1s-1 and -100 cm-2 V-1s-1 have been obtained for lateral MOSFETs fabricated on the (0001) and (1120) faces, respectively. These electronic measurements have been correlated to the interface chemical composition.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages949-954
Number of pages6
Volume527-529
EditionPART 2
Publication statusPublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 2
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Passivation
Hydrogen
Nitrogen
Nitridation
Conduction bands
Annealing
Oxidation
Defects
Crystals
Chemical analysis

Keywords

  • Crystal faces
  • Field effect mobility
  • Interface state density
  • Interface traps
  • Nitric oxide
  • Nitridation
  • Oxidation
  • Passivation
  • Post-metallization annealing
  • Post-oxidation annealing
  • SiO/SiC interface

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Dhar, S., Wang, S., Ahyi, A. C., Isaacs-Smith, T., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2006). Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface. In Materials Science Forum (PART 2 ed., Vol. 527-529, pp. 949-954). (Materials Science Forum; Vol. 527-529, No. PART 2).

Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface. / Dhar, S.; Wang, S.; Ahyi, A. C.; Isaacs-Smith, T.; Pantelides, S. T.; Williams, J. R.; Feldman, Leonard C.

Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. p. 949-954 (Materials Science Forum; Vol. 527-529, No. PART 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dhar, S, Wang, S, Ahyi, AC, Isaacs-Smith, T, Pantelides, ST, Williams, JR & Feldman, LC 2006, Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface. in Materials Science Forum. PART 2 edn, vol. 527-529, Materials Science Forum, no. PART 2, vol. 527-529, pp. 949-954, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Dhar S, Wang S, Ahyi AC, Isaacs-Smith T, Pantelides ST, Williams JR et al. Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface. In Materials Science Forum. PART 2 ed. Vol. 527-529. 2006. p. 949-954. (Materials Science Forum; PART 2).
Dhar, S. ; Wang, S. ; Ahyi, A. C. ; Isaacs-Smith, T. ; Pantelides, S. T. ; Williams, J. R. ; Feldman, Leonard C. / Nitrogen and hydrogen induced trap passivation at the SiO 2/4H-SiC interface. Materials Science Forum. Vol. 527-529 PART 2. ed. 2006. pp. 949-954 (Materials Science Forum; PART 2).
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AU - Wang, S.

AU - Ahyi, A. C.

AU - Isaacs-Smith, T.

AU - Pantelides, S. T.

AU - Williams, J. R.

AU - Feldman, Leonard C

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AB - Post-oxidation anneals that introduce nitrogen at the SiO 2/4H-SiC interface have been most effective in reducing the large interface trap density near the 4H-SiC conduction band-edge for (0001) Si face 4H-SiC Herein, we report the effect of nitridation on interfaces created on the (11 20) a-face and the (0001) C-face of 4H-SiC Significant reductions in trap density (from >1012 cm-2 eV-1 to ∼ 1012 cm-2 eV-1 at Ec-E -0.1 eV) were observed for these different interfaces, indicating the presence of substantial nitrogen susceptible defects for all crystal faces. Annealing nitridated interfaces in hydrogen results in a further reduction of trap density (from ∼1012 cm-2 eV-1 to ∼5 × 10 11 cm-2 eV-1 at Ec-E -0.1 eV). Using sequential anneals in NO and H2, maximum field effect mobilities of ∼55 cm-2 V-1s-1 and -100 cm-2 V-1s-1 have been obtained for lateral MOSFETs fabricated on the (0001) and (1120) faces, respectively. These electronic measurements have been correlated to the interface chemical composition.

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