Abstract
The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 220-224 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 429 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - May 1 2003 |
Keywords
- Electrical properties and measurements
- Indium tin oxide
- Laser ablation
- Rutherford backscattering spectrometry
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry