Abstract
The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 220-224 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 429 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - May 1 2003 |
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Keywords
- Electrical properties and measurements
- Indium tin oxide
- Laser ablation
- Rutherford backscattering spectrometry
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature. / Morales-Paliza, M. A.; Huang, M. B.; Feldman, Leonard C.
In: Thin Solid Films, Vol. 429, No. 1-2, 01.05.2003, p. 220-224.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature
AU - Morales-Paliza, M. A.
AU - Huang, M. B.
AU - Feldman, Leonard C
PY - 2003/5/1
Y1 - 2003/5/1
N2 - The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.
AB - The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.
KW - Electrical properties and measurements
KW - Indium tin oxide
KW - Laser ablation
KW - Rutherford backscattering spectrometry
UR - http://www.scopus.com/inward/record.url?scp=0038636427&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038636427&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(03)00159-7
DO - 10.1016/S0040-6090(03)00159-7
M3 - Article
AN - SCOPUS:0038636427
VL - 429
SP - 220
EP - 224
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -