Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature

M. A. Morales-Paliza, M. B. Huang, Leonard C Feldman

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.

Original languageEnglish
Pages (from-to)220-224
Number of pages5
JournalThin Solid Films
Volume429
Issue number1-2
DOIs
Publication statusPublished - May 1 2003

Fingerprint

Pulsed laser deposition
Tin oxides
indium oxides
Indium
tin oxides
Oxide films
pulsed laser deposition
oxide films
Nitrogen
Gases
nitrogen
room temperature
gases
transmittance
oxygen
Temperature
Oxygen
conduction
Hall effect
Rutherford backscattering spectroscopy

Keywords

  • Electrical properties and measurements
  • Indium tin oxide
  • Laser ablation
  • Rutherford backscattering spectrometry

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature. / Morales-Paliza, M. A.; Huang, M. B.; Feldman, Leonard C.

In: Thin Solid Films, Vol. 429, No. 1-2, 01.05.2003, p. 220-224.

Research output: Contribution to journalArticle

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AB - The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.

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