Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature

M. A. Morales-Paliza, M. B. Huang, L. C. Feldman

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The use of nitrogen as background gas to assist pulsed-laser deposition in the fabrication of indium tin oxide (ITO) films at room temperature produces both highly conductive and transparent films (∼8 × 10-4 Ωcm and ∼85% of transmittance), comparable to those obtained by using oxygen (∼4 × 10-4 Ωcm and ∼90% of transmittance). Hall-effect electrical measurements, Rutherford backscattering spectrometry, X-ray diffraction and optical transmission on these films are reported. For the films with best conducting and transparent properties, atomic nitrogen is 5% of the atomic oxygen content in the films. The amount of nitrogen correlates to the amount of electron-carrier concentration in the films, which suggests that incorporation of nitrogen from the background gas plays an important role in the creation of oxygen vacancies - the main conduction mechanism in high-quality ITO films grown over substrates at room temperature.

Original languageEnglish
Pages (from-to)220-224
Number of pages5
JournalThin Solid Films
Volume429
Issue number1-2
DOIs
Publication statusPublished - May 1 2003

Keywords

  • Electrical properties and measurements
  • Indium tin oxide
  • Laser ablation
  • Rutherford backscattering spectrometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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