Abstract
The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.
| Original language | English |
|---|---|
| Pages (from-to) | 3473-3475 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 64 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 1994 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Nitrogen content of oxynitride films on Si(100). / Tang, H. T.; Lennard, W. N.; Zinke-Allmang, M.; Mitchell, I. V.; Feldman, Leonard C; Green, M. L.; Brasen, D.
In: Applied Physics Letters, Vol. 64, No. 25, 1994, p. 3473-3475.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nitrogen content of oxynitride films on Si(100)
AU - Tang, H. T.
AU - Lennard, W. N.
AU - Zinke-Allmang, M.
AU - Mitchell, I. V.
AU - Feldman, Leonard C
AU - Green, M. L.
AU - Brasen, D.
PY - 1994
Y1 - 1994
N2 - The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.
AB - The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.
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U2 - 10.1063/1.111948
DO - 10.1063/1.111948
M3 - Article
VL - 64
SP - 3473
EP - 3475
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
ER -