Nitrogen content of oxynitride films on Si(100)

H. T. Tang, W. N. Lennard, M. Zinke-Allmang, I. V. Mitchell, Leonard C Feldman, M. L. Green, D. Brasen

Research output: Contribution to journalArticle

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Abstract

The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.

Original languageEnglish
Pages (from-to)3473-3475
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number25
DOIs
Publication statusPublished - 1994

Fingerprint

oxynitrides
nitrogen
nuclear reactions
x ray spectroscopy
secondary ion mass spectrometry
Auger spectroscopy
electron spectroscopy
photoelectron spectroscopy
oxidation
temperature
sensitivity
silicon
profiles
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tang, H. T., Lennard, W. N., Zinke-Allmang, M., Mitchell, I. V., Feldman, L. C., Green, M. L., & Brasen, D. (1994). Nitrogen content of oxynitride films on Si(100). Applied Physics Letters, 64(25), 3473-3475. https://doi.org/10.1063/1.111948

Nitrogen content of oxynitride films on Si(100). / Tang, H. T.; Lennard, W. N.; Zinke-Allmang, M.; Mitchell, I. V.; Feldman, Leonard C; Green, M. L.; Brasen, D.

In: Applied Physics Letters, Vol. 64, No. 25, 1994, p. 3473-3475.

Research output: Contribution to journalArticle

Tang, HT, Lennard, WN, Zinke-Allmang, M, Mitchell, IV, Feldman, LC, Green, ML & Brasen, D 1994, 'Nitrogen content of oxynitride films on Si(100)', Applied Physics Letters, vol. 64, no. 25, pp. 3473-3475. https://doi.org/10.1063/1.111948
Tang HT, Lennard WN, Zinke-Allmang M, Mitchell IV, Feldman LC, Green ML et al. Nitrogen content of oxynitride films on Si(100). Applied Physics Letters. 1994;64(25):3473-3475. https://doi.org/10.1063/1.111948
Tang, H. T. ; Lennard, W. N. ; Zinke-Allmang, M. ; Mitchell, I. V. ; Feldman, Leonard C ; Green, M. L. ; Brasen, D. / Nitrogen content of oxynitride films on Si(100). In: Applied Physics Letters. 1994 ; Vol. 64, No. 25. pp. 3473-3475.
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