Nitrogen content of oxynitride films on Si(100)

H. T. Tang; W. N. Lennard; M. Zinke-Allmang; I. V. Mitchell; L. C. Feldman; M. L. Green; D. Brasen

doi:10.1063/1.111948

Nitrogen content of oxynitride films on Si(100)

H. T. Tang, W. N. Lennard, M. Zinke-Allmang, I. V. Mitchell, L. C. Feldman, M. L. Green, D. Brasen

Rutgers University

Research output: Contribution to journal › Article

38 Citations (Scopus)

Abstract

The absolute nitrogen concentration in SiO_xN_y/Si films grown by rapid thermal oxidation in N₂O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction ¹⁴N(d,α) ¹²C provides more accurate depth profiles of ¹⁴N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×10¹³ atoms cm². Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.

Original language	English
Pages (from-to)	3473-3475
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	25
DOIs	https://doi.org/10.1063/1.111948
Publication status	Published - Dec 1 1994

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Tang, H. T., Lennard, W. N., Zinke-Allmang, M., Mitchell, I. V., Feldman, L. C., Green, M. L., & Brasen, D. (1994). Nitrogen content of oxynitride films on Si(100). Applied Physics Letters, 64(25), 3473-3475. https://doi.org/10.1063/1.111948

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abstract = "The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.",

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AU - Tang, H. T.

AU - Lennard, W. N.

AU - Zinke-Allmang, M.

AU - Mitchell, I. V.

AU - Feldman, L. C.

AU - Green, M. L.

AU - Brasen, D.

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AB - The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.

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