Nitrogen content of oxynitride films on Si(100)

H. T. Tang, W. N. Lennard, M. Zinke-Allmang, I. V. Mitchell, L. C. Feldman, M. L. Green, D. Brasen

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


The absolute nitrogen concentration in SiOxNy/Si films grown by rapid thermal oxidation in N2O has been determined by nuclear reaction analysis. Compared with conventional surface analysis methods, i.e., Auger electron spectroscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry, the nuclear reaction 14N(d,α) 12C provides more accurate depth profiles of 14N due to the quantitative nature of the technique and its high sensitivity, ∼6.0×1013 atoms cm2. Silicon oxynitride films prepared under various conditions, specifically different growing temperatures and times, were analyzed. Nitrogen is observed to accumulate in a narrow region in the oxynitride (within ≲2.5 nm) close to the interface; the total amount of nitrogen increases with increasing temperature and growth time.

Original languageEnglish
Pages (from-to)3473-3475
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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