Abstract
Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.
| Original language | English |
|---|---|
| Pages (from-to) | 123-129 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 226 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jun 2001 |
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Keywords
- A1. Doping
- A3. Metalorganic chemical vapor deposition
- B2. Semiconducting materials
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition. / Wang, Xinqiang; Yang, Shuren; Wang, Jinzhong; Li, Mingtao; Jiang, Xiuying; Du, Guotong; Liu, Xiang; Chang, Robert P. H.
In: Journal of Crystal Growth, Vol. 226, No. 1, 06.2001, p. 123-129.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition
AU - Wang, Xinqiang
AU - Yang, Shuren
AU - Wang, Jinzhong
AU - Li, Mingtao
AU - Jiang, Xiuying
AU - Du, Guotong
AU - Liu, Xiang
AU - Chang, Robert P. H.
PY - 2001/6
Y1 - 2001/6
N2 - Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.
AB - Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.
KW - A1. Doping
KW - A3. Metalorganic chemical vapor deposition
KW - B2. Semiconducting materials
UR - http://www.scopus.com/inward/record.url?scp=0035369224&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035369224&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01367-7
DO - 10.1016/S0022-0248(01)01367-7
M3 - Article
AN - SCOPUS:0035369224
VL - 226
SP - 123
EP - 129
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -