Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition

Xinqiang Wang, Shuren Yang, Jinzhong Wang, Mingtao Li, Xiuying Jiang, Guotong Du, Xiang Liu, Robert P. H. Chang

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

Nitrogen doped and non-doped ZnO films are grown by the plasma-assisted metal-organic chemical vapor deposition (MOCVD) on sapphire. X-ray diffraction spectra show that they are both strongly c-oriented while the N-doped sample is of better crystal quality. A strong emission coming from A-exciton is observed at 10 and 77K photoluminescence (PL) spectra in both samples while deep level transition is hardly observed. More emission peaks are found in the PL spectrum of the N-doped sample relative to that of a non-doped one. Raman scattering is also performed in back scattering configuration. E2 mode is observed in both samples while A1(LO) mode can only be found in the N-doped sample, which indicates that high quality of the N-doped ZnO film. A high resistive ZnO film is obtained by nitrogen doping.

Original languageEnglish
Pages (from-to)123-129
Number of pages7
JournalJournal of Crystal Growth
Volume226
Issue number1
DOIs
Publication statusPublished - Jun 2001

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Keywords

  • A1. Doping
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics

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