The paper discusses nitrogen engineering of ultrathin (2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - Sep 1 1998|
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)