Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process

E. P. Gusev, H. C. Lu, E. Garfunkel, T. Gustafsson, M. L. Green, D. Brasen, W. N. Lennard

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Abstract

The paper discusses nitrogen engineering of ultrathin (<5 nm) oxynitride gate dielectrics. The dielectric film that we have aimed for has two nitrogen enhanced layers: one at the SiO2/polysilicon interface to retard boron diffusion from the gate, and a smaller one peaked at the Si/SiO2 interface to increase the hot electron degradation resistance. We were able to produce this dielectric by a thermal (NO/O2/NO) process, aided by an understanding of the kinetics and thermodynamics of nitrogen incorporation in SiO2.

Original languageEnglish
Pages (from-to)2980-2982
Number of pages3
JournalJournal of Applied Physics
Volume84
Issue number5
DOIs
Publication statusPublished - Sep 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Gusev, E. P., Lu, H. C., Garfunkel, E., Gustafsson, T., Green, M. L., Brasen, D., & Lennard, W. N. (1998). Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process. Journal of Applied Physics, 84(5), 2980-2982. https://doi.org/10.1063/1.368435