Nitrogen passivation of deposited oxides on n 4H-SiC

G. Y. Chung, J. R. Williams, T. Isaacs-Smith, F. Ren, K. McDonald, L. C. Feldman

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Abstract

The measurement of interface state density and breakdown field strength was reported for deposited oxides on n4H-SiC following passivation with nitric oxide. The low temperature oxides deposited by plasma-enhanced chemical vapor deposition and high temperature oxides deposited at 950°C were analyzed. The breakdown field strengths were found to be higher for passivated high temperature oxides compared to passivated low temperature oxides at room temperature.

Original languageEnglish
Pages (from-to)4266-4268
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number22
DOIs
Publication statusPublished - Nov 25 2002

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, G. Y., Williams, J. R., Isaacs-Smith, T., Ren, F., McDonald, K., & Feldman, L. C. (2002). Nitrogen passivation of deposited oxides on n 4H-SiC. Applied Physics Letters, 81(22), 4266-4268. https://doi.org/10.1063/1.1525058