The measurement of interface state density and breakdown field strength was reported for deposited oxides on n4H-SiC following passivation with nitric oxide. The low temperature oxides deposited by plasma-enhanced chemical vapor deposition and high temperature oxides deposited at 950°C were analyzed. The breakdown field strengths were found to be higher for passivated high temperature oxides compared to passivated low temperature oxides at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)