Nitrogen passivation of deposited oxides on n 4H-SiC

G. Y. Chung, J. R. Williams, T. Isaacs-Smith, F. Ren, K. McDonald, Leonard C Feldman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The measurement of interface state density and breakdown field strength was reported for deposited oxides on n4H-SiC following passivation with nitric oxide. The low temperature oxides deposited by plasma-enhanced chemical vapor deposition and high temperature oxides deposited at 950°C were analyzed. The breakdown field strengths were found to be higher for passivated high temperature oxides compared to passivated low temperature oxides at room temperature.

Original languageEnglish
Pages (from-to)4266-4268
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number22
DOIs
Publication statusPublished - Nov 25 2002

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passivity
nitrogen
oxides
field strength
breakdown
nitric oxide
vapor deposition
room temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chung, G. Y., Williams, J. R., Isaacs-Smith, T., Ren, F., McDonald, K., & Feldman, L. C. (2002). Nitrogen passivation of deposited oxides on n 4H-SiC. Applied Physics Letters, 81(22), 4266-4268. https://doi.org/10.1063/1.1525058

Nitrogen passivation of deposited oxides on n 4H-SiC. / Chung, G. Y.; Williams, J. R.; Isaacs-Smith, T.; Ren, F.; McDonald, K.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 81, No. 22, 25.11.2002, p. 4266-4268.

Research output: Contribution to journalArticle

Chung, GY, Williams, JR, Isaacs-Smith, T, Ren, F, McDonald, K & Feldman, LC 2002, 'Nitrogen passivation of deposited oxides on n 4H-SiC', Applied Physics Letters, vol. 81, no. 22, pp. 4266-4268. https://doi.org/10.1063/1.1525058
Chung GY, Williams JR, Isaacs-Smith T, Ren F, McDonald K, Feldman LC. Nitrogen passivation of deposited oxides on n 4H-SiC. Applied Physics Letters. 2002 Nov 25;81(22):4266-4268. https://doi.org/10.1063/1.1525058
Chung, G. Y. ; Williams, J. R. ; Isaacs-Smith, T. ; Ren, F. ; McDonald, K. ; Feldman, Leonard C. / Nitrogen passivation of deposited oxides on n 4H-SiC. In: Applied Physics Letters. 2002 ; Vol. 81, No. 22. pp. 4266-4268.
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