Nitrogen passivation of deposited oxides on n 4H-SiC

G. Y. Chung, J. R. Williams, T. Isaacs-Smith, F. Ren, K. McDonald, L. C. Feldman

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


The measurement of interface state density and breakdown field strength was reported for deposited oxides on n4H-SiC following passivation with nitric oxide. The low temperature oxides deposited by plasma-enhanced chemical vapor deposition and high temperature oxides deposited at 950°C were analyzed. The breakdown field strengths were found to be higher for passivated high temperature oxides compared to passivated low temperature oxides at room temperature.

Original languageEnglish
Pages (from-to)4266-4268
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - Nov 25 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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