Nitrogen passivation of the interface states near the conduction band edge in 4H-silicon carbide

J. R. Williams, G. Y. Chung, C. C. Tin, K. McDonald, D. Farmer, R. K. Chanana, S. T. Pantelides, L. C. Feldman, R. A. Weller, S. T. Pantelides, O. W. Holland, L. C. Feldman, M. K. Das, L. A. Lipkin

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