Nitrogen plasma processing of SiO2/4H-SiC interfaces

A. Modic, Y. K. Sharma, Y. Xu, G. Liu, A. C. Ahyi, J. R. Williams, Leonard C Feldman, S. Dhar

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO 2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.

Original languageEnglish
Pages (from-to)857-862
Number of pages6
JournalJournal of Electronic Materials
Volume43
Issue number4
DOIs
Publication statusPublished - 2014

Fingerprint

Nitrogen plasma
Plasma applications
nitrogen plasma
MOSFET devices
field effect transistors
Nitric oxide
nitric oxide
Field effect transistors
metal oxide semiconductors
Nitric Oxide
Annealing
Charge trapping
annealing
Gate dielectrics
Metals
trapping
traps

Keywords

  • field-effect mobility
  • interface trap density
  • nitrogen plasma passivation
  • Silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Modic, A., Sharma, Y. K., Xu, Y., Liu, G., Ahyi, A. C., Williams, J. R., ... Dhar, S. (2014). Nitrogen plasma processing of SiO2/4H-SiC interfaces. Journal of Electronic Materials, 43(4), 857-862. https://doi.org/10.1007/s11664-014-3022-8

Nitrogen plasma processing of SiO2/4H-SiC interfaces. / Modic, A.; Sharma, Y. K.; Xu, Y.; Liu, G.; Ahyi, A. C.; Williams, J. R.; Feldman, Leonard C; Dhar, S.

In: Journal of Electronic Materials, Vol. 43, No. 4, 2014, p. 857-862.

Research output: Contribution to journalArticle

Modic, A, Sharma, YK, Xu, Y, Liu, G, Ahyi, AC, Williams, JR, Feldman, LC & Dhar, S 2014, 'Nitrogen plasma processing of SiO2/4H-SiC interfaces', Journal of Electronic Materials, vol. 43, no. 4, pp. 857-862. https://doi.org/10.1007/s11664-014-3022-8
Modic A, Sharma YK, Xu Y, Liu G, Ahyi AC, Williams JR et al. Nitrogen plasma processing of SiO2/4H-SiC interfaces. Journal of Electronic Materials. 2014;43(4):857-862. https://doi.org/10.1007/s11664-014-3022-8
Modic, A. ; Sharma, Y. K. ; Xu, Y. ; Liu, G. ; Ahyi, A. C. ; Williams, J. R. ; Feldman, Leonard C ; Dhar, S. / Nitrogen plasma processing of SiO2/4H-SiC interfaces. In: Journal of Electronic Materials. 2014 ; Vol. 43, No. 4. pp. 857-862.
@article{f95fef80cdc54f4db0df21acb9c5d590,
title = "Nitrogen plasma processing of SiO2/4H-SiC interfaces",
abstract = "A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO 2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.",
keywords = "field-effect mobility, interface trap density, nitrogen plasma passivation, Silicon carbide",
author = "A. Modic and Sharma, {Y. K.} and Y. Xu and G. Liu and Ahyi, {A. C.} and Williams, {J. R.} and Feldman, {Leonard C} and S. Dhar",
year = "2014",
doi = "10.1007/s11664-014-3022-8",
language = "English",
volume = "43",
pages = "857--862",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "4",

}

TY - JOUR

T1 - Nitrogen plasma processing of SiO2/4H-SiC interfaces

AU - Modic, A.

AU - Sharma, Y. K.

AU - Xu, Y.

AU - Liu, G.

AU - Ahyi, A. C.

AU - Williams, J. R.

AU - Feldman, Leonard C

AU - Dhar, S.

PY - 2014

Y1 - 2014

N2 - A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO 2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.

AB - A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO 2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.

KW - field-effect mobility

KW - interface trap density

KW - nitrogen plasma passivation

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=84898810858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898810858&partnerID=8YFLogxK

U2 - 10.1007/s11664-014-3022-8

DO - 10.1007/s11664-014-3022-8

M3 - Article

VL - 43

SP - 857

EP - 862

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -