Nitrogen plasma processing of SiO2/4H-SiC interfaces

A. Modic, Y. K. Sharma, Y. Xu, G. Liu, A. C. Ahyi, J. R. Williams, L. C. Feldman, S. Dhar

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


A nitrogen plasma annealing process for gate dielectric applications in 4H-SiC metal oxide semiconductor (MOS) technology has been investigated. This process results in substantially greater interfacial N coverage at the SiO 2/4H-SiC interface and lower interface trap densities than the state-of-the-art nitric oxide (NO) annealing process. Despite these exciting results, the field-effect mobility of MOS field-effect transistors (MOSFETs) fabricated by use of this process is very similar to that of NO-annealed MOSFETs. These results emphasize the importance of understanding mobility-limiting mechanisms in addition to charge trapping in next-generation 4H-SiC MOSFETs.

Original languageEnglish
Pages (from-to)857-862
Number of pages6
JournalJournal of Electronic Materials
Issue number4
Publication statusPublished - Jan 1 2014


  • Silicon carbide
  • field-effect mobility
  • interface trap density
  • nitrogen plasma passivation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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