Nitrous oxide gas phase chemistry during silicon oxynitride film growth

A. Gupta, S. Toby, E. P. Gusev, H. C. Lu, Y. Li, M. L. Green, T. Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 <α <0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).

Original languageEnglish
Pages (from-to)103-115
Number of pages13
JournalProgress in Surface Science
Volume59
Issue number1-4
Publication statusPublished - Sep 1998

Fingerprint

nitrous oxides
oxynitrides
Nitrous Oxide
Silicon
Film growth
Gases
chemistry
vapor phases
Decomposition
decomposition
Oxides
silicon
Activation energy
activation energy
Molecules
Kinetics
Ultrathin films
gas composition
kinetics
Semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Gupta, A., Toby, S., Gusev, E. P., Lu, H. C., Li, Y., Green, M. L., ... Garfunkel, E. (1998). Nitrous oxide gas phase chemistry during silicon oxynitride film growth. Progress in Surface Science, 59(1-4), 103-115.

Nitrous oxide gas phase chemistry during silicon oxynitride film growth. / Gupta, A.; Toby, S.; Gusev, E. P.; Lu, H. C.; Li, Y.; Green, M. L.; Gustafsson, T.; Garfunkel, Eric.

In: Progress in Surface Science, Vol. 59, No. 1-4, 09.1998, p. 103-115.

Research output: Contribution to journalArticle

Gupta, A, Toby, S, Gusev, EP, Lu, HC, Li, Y, Green, ML, Gustafsson, T & Garfunkel, E 1998, 'Nitrous oxide gas phase chemistry during silicon oxynitride film growth', Progress in Surface Science, vol. 59, no. 1-4, pp. 103-115.
Gupta A, Toby S, Gusev EP, Lu HC, Li Y, Green ML et al. Nitrous oxide gas phase chemistry during silicon oxynitride film growth. Progress in Surface Science. 1998 Sep;59(1-4):103-115.
Gupta, A. ; Toby, S. ; Gusev, E. P. ; Lu, H. C. ; Li, Y. ; Green, M. L. ; Gustafsson, T. ; Garfunkel, Eric. / Nitrous oxide gas phase chemistry during silicon oxynitride film growth. In: Progress in Surface Science. 1998 ; Vol. 59, No. 1-4. pp. 103-115.
@article{dc4a253f78634f5888787b114793d4fa,
title = "Nitrous oxide gas phase chemistry during silicon oxynitride film growth",
abstract = "N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3{\%}); O2 (32.0 - 25.7{\%}), NO (2.7 - 15.0{\%}), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 <α <0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).",
author = "A. Gupta and S. Toby and Gusev, {E. P.} and Lu, {H. C.} and Y. Li and Green, {M. L.} and T. Gustafsson and Eric Garfunkel",
year = "1998",
month = "9",
language = "English",
volume = "59",
pages = "103--115",
journal = "Progress in Surface Science",
issn = "0079-6816",
publisher = "Elsevier Limited",
number = "1-4",

}

TY - JOUR

T1 - Nitrous oxide gas phase chemistry during silicon oxynitride film growth

AU - Gupta, A.

AU - Toby, S.

AU - Gusev, E. P.

AU - Lu, H. C.

AU - Li, Y.

AU - Green, M. L.

AU - Gustafsson, T.

AU - Garfunkel, Eric

PY - 1998/9

Y1 - 1998/9

N2 - N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 <α <0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).

AB - N2O gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of N2O, (ii) the gas composition over a 1000K - 1400K temperature range is as follows: N2 (65.3 - 59.3%); O2 (32.0 - 25.7%), NO (2.7 - 15.0%), (iii) the N2O decomposition obeys first-order kinetics, and the initial rate law for N2O decomposition is Rinit = 2k1[N2O] which rapidly changes to Rlate = k1[N2O] as the reaction proceeds, (iv) the branching ratio for the two reactions: N2O + O → 2NO and N2O → O N2 + O2 lies between 0.1 and 0.5 (0.1 <α <0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N2O is 2.5 eV/molecule (2.4×102 kJ/mole), (vi) the rate law for NO formation is R = k1[N2O], and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3×102 kJ/mole).

UR - http://www.scopus.com/inward/record.url?scp=0032157803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032157803&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032157803

VL - 59

SP - 103

EP - 115

JO - Progress in Surface Science

JF - Progress in Surface Science

SN - 0079-6816

IS - 1-4

ER -