Nitroxyl free radical binding to Si(1 0 0)

A combined scanning tunneling microscopy and computational modeling study

Mark E. Greene, Nathan P. Guisinger, Rajiv Basu, Andrew S. Baluch, Mark C Hersam

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The ultra-high vacuum scanning tunneling microscope (UHV-STM) was used to investigate the addition of the 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) radical to the Si(1 0 0) surface. Room temperature studies performed on clean Si(1 0 0)-2×1 confirm the proposed binding of the unpaired valence electron associated with the singly occupied molecular orbital (SOMO) of the molecule with a Si dangling bond. A strong bias dependence in the topography of isolated molecules was observed in the range of -2.0 to +2.5 V. Semiempirical and density functional calculations of TEMPO bound to a three-dimer silicon cluster model yield occupied state density isosurfaces below the highest occupied (HOMO) and unoccupied state densities isosurfaces above the lowest unoccupied molecular orbital (LUMO) which trend in qualitative agreement with the bias dependent STM topography. Furthermore, the placement of TEMPO molecules on dangling bonds was controlled with atomic precision on the monohydride Si(1 0 0) surface via electron stimulated desorption of H, demonstrating the compatibility of nitroxyl free radical binding chemistries with nanopatterning techniques such as feedback controlled lithography.

Original languageEnglish
Pages (from-to)16-28
Number of pages13
JournalSurface Science
Volume559
Issue number1
DOIs
Publication statusPublished - Jun 10 2004

Fingerprint

Scanning tunneling microscopy
Free radicals
free radicals
Free Radicals
scanning tunneling microscopy
Dangling bonds
Molecular orbitals
Topography
Molecules
molecular orbitals
topography
molecules
Electrons
Ultrahigh vacuum
Silicon
Dimers
Lithography
compatibility
ultrahigh vacuum
Density functional theory

Keywords

  • Density functional calculations
  • Molecule-solid reactions
  • Scanning tunneling microscopy
  • Silicon
  • Surface electronic phenomena (work function, surface potential, surface states, etc.)

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Nitroxyl free radical binding to Si(1 0 0) : A combined scanning tunneling microscopy and computational modeling study. / Greene, Mark E.; Guisinger, Nathan P.; Basu, Rajiv; Baluch, Andrew S.; Hersam, Mark C.

In: Surface Science, Vol. 559, No. 1, 10.06.2004, p. 16-28.

Research output: Contribution to journalArticle

Greene, Mark E. ; Guisinger, Nathan P. ; Basu, Rajiv ; Baluch, Andrew S. ; Hersam, Mark C. / Nitroxyl free radical binding to Si(1 0 0) : A combined scanning tunneling microscopy and computational modeling study. In: Surface Science. 2004 ; Vol. 559, No. 1. pp. 16-28.
@article{05d508ffb48a4f8f9232a7ef40bdd076,
title = "Nitroxyl free radical binding to Si(1 0 0): A combined scanning tunneling microscopy and computational modeling study",
abstract = "The ultra-high vacuum scanning tunneling microscope (UHV-STM) was used to investigate the addition of the 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) radical to the Si(1 0 0) surface. Room temperature studies performed on clean Si(1 0 0)-2×1 confirm the proposed binding of the unpaired valence electron associated with the singly occupied molecular orbital (SOMO) of the molecule with a Si dangling bond. A strong bias dependence in the topography of isolated molecules was observed in the range of -2.0 to +2.5 V. Semiempirical and density functional calculations of TEMPO bound to a three-dimer silicon cluster model yield occupied state density isosurfaces below the highest occupied (HOMO) and unoccupied state densities isosurfaces above the lowest unoccupied molecular orbital (LUMO) which trend in qualitative agreement with the bias dependent STM topography. Furthermore, the placement of TEMPO molecules on dangling bonds was controlled with atomic precision on the monohydride Si(1 0 0) surface via electron stimulated desorption of H, demonstrating the compatibility of nitroxyl free radical binding chemistries with nanopatterning techniques such as feedback controlled lithography.",
keywords = "Density functional calculations, Molecule-solid reactions, Scanning tunneling microscopy, Silicon, Surface electronic phenomena (work function, surface potential, surface states, etc.)",
author = "Greene, {Mark E.} and Guisinger, {Nathan P.} and Rajiv Basu and Baluch, {Andrew S.} and Hersam, {Mark C}",
year = "2004",
month = "6",
day = "10",
doi = "10.1016/j.susc.2004.04.012",
language = "English",
volume = "559",
pages = "16--28",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Nitroxyl free radical binding to Si(1 0 0)

T2 - A combined scanning tunneling microscopy and computational modeling study

AU - Greene, Mark E.

AU - Guisinger, Nathan P.

AU - Basu, Rajiv

AU - Baluch, Andrew S.

AU - Hersam, Mark C

PY - 2004/6/10

Y1 - 2004/6/10

N2 - The ultra-high vacuum scanning tunneling microscope (UHV-STM) was used to investigate the addition of the 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) radical to the Si(1 0 0) surface. Room temperature studies performed on clean Si(1 0 0)-2×1 confirm the proposed binding of the unpaired valence electron associated with the singly occupied molecular orbital (SOMO) of the molecule with a Si dangling bond. A strong bias dependence in the topography of isolated molecules was observed in the range of -2.0 to +2.5 V. Semiempirical and density functional calculations of TEMPO bound to a three-dimer silicon cluster model yield occupied state density isosurfaces below the highest occupied (HOMO) and unoccupied state densities isosurfaces above the lowest unoccupied molecular orbital (LUMO) which trend in qualitative agreement with the bias dependent STM topography. Furthermore, the placement of TEMPO molecules on dangling bonds was controlled with atomic precision on the monohydride Si(1 0 0) surface via electron stimulated desorption of H, demonstrating the compatibility of nitroxyl free radical binding chemistries with nanopatterning techniques such as feedback controlled lithography.

AB - The ultra-high vacuum scanning tunneling microscope (UHV-STM) was used to investigate the addition of the 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) radical to the Si(1 0 0) surface. Room temperature studies performed on clean Si(1 0 0)-2×1 confirm the proposed binding of the unpaired valence electron associated with the singly occupied molecular orbital (SOMO) of the molecule with a Si dangling bond. A strong bias dependence in the topography of isolated molecules was observed in the range of -2.0 to +2.5 V. Semiempirical and density functional calculations of TEMPO bound to a three-dimer silicon cluster model yield occupied state density isosurfaces below the highest occupied (HOMO) and unoccupied state densities isosurfaces above the lowest unoccupied molecular orbital (LUMO) which trend in qualitative agreement with the bias dependent STM topography. Furthermore, the placement of TEMPO molecules on dangling bonds was controlled with atomic precision on the monohydride Si(1 0 0) surface via electron stimulated desorption of H, demonstrating the compatibility of nitroxyl free radical binding chemistries with nanopatterning techniques such as feedback controlled lithography.

KW - Density functional calculations

KW - Molecule-solid reactions

KW - Scanning tunneling microscopy

KW - Silicon

KW - Surface electronic phenomena (work function, surface potential, surface states, etc.)

UR - http://www.scopus.com/inward/record.url?scp=2442640651&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442640651&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2004.04.012

DO - 10.1016/j.susc.2004.04.012

M3 - Article

VL - 559

SP - 16

EP - 28

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1

ER -