Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

Andriy Zakutayev, Nicola H. Perry, Thomas O Mason, David S. Ginley, Stephan Lany

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

Original languageEnglish
Article number232106
JournalApplied Physics Letters
Volume103
Issue number23
DOIs
Publication statusPublished - Dec 2 2013

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gallium oxides
zinc oxides
metastable state
electrical resistivity
oxides
defects
thin films
physical properties
glass
electronics
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films. / Zakutayev, Andriy; Perry, Nicola H.; Mason, Thomas O; Ginley, David S.; Lany, Stephan.

In: Applied Physics Letters, Vol. 103, No. 23, 232106, 02.12.2013.

Research output: Contribution to journalArticle

Zakutayev, Andriy ; Perry, Nicola H. ; Mason, Thomas O ; Ginley, David S. ; Lany, Stephan. / Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films. In: Applied Physics Letters. 2013 ; Vol. 103, No. 23.
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