Non-stoichiometry, electrical properties, and cation diffusion in highly non-stoichiometric Co1-xO-II. Modelling the defect structure†

K. Persels Constant, Thomas O Mason, J. L. Routbort

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The defect structure of highly non-stoichometric Co1-xO is examined by fitting non-stoichiometry, electrical properties and cation diffusion data with various models. The ideal point defect model, the generalized cluster model and Debye-Huckel theory model for isolated vacancies are all shown to be inadequate in describing the properties dependence on oxygen partial pressure. A model is developed which considers non-interacting isolated vacancies, V′ and V″, and 4:1′″ clusters with Debye-Huckel interactions. All properties were accurately fit from 10-6 ≤ P ≤ 35 atm at 1200°C using this non-unique model.

Original languageEnglish
Pages (from-to)413-418
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume53
Issue number3
DOIs
Publication statusPublished - 1992

Fingerprint

Defect structures
Cations
Electric properties
Positive ions
electrical properties
cations
defects
Vacancies
Debye-Huckel theory
Point defects
Partial pressure
point defects
partial pressure
Oxygen
oxygen
interactions

Keywords

  • Co
  • Debye-Hückel theory
  • defect clustering
  • defect modelling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Non-stoichiometry, electrical properties, and cation diffusion in highly non-stoichiometric Co1-xO-II. Modelling the defect structure†. / Persels Constant, K.; Mason, Thomas O; Routbort, J. L.

In: Journal of Physics and Chemistry of Solids, Vol. 53, No. 3, 1992, p. 413-418.

Research output: Contribution to journalArticle

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