NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes; J. B. Theeten; Robert P. H. Chang

doi:10.1116/1.570202

NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes, J. B. Theeten, Robert P. H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.

Original language	English
Pages (from-to)	1374-1378
Number of pages	5
Journal	Journal of vacuum science & technology
Volume	16
Issue number	5
DOIs	https://doi.org/10.1116/1.570202
Publication status	Published - Sep 1979

ASJC Scopus subject areas

Engineering(all)

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abstract = "The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.",

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