Abstract
The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.
| Original language | English |
|---|---|
| Pages (from-to) | 1374-1378 |
| Number of pages | 5 |
| Journal | Journal of vacuum science & technology |
| Volume | 16 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Sep 1979 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY. / Aspnes, D. E.; Theeten, J. B.; Chang, Robert P. H.
In: Journal of vacuum science & technology, Vol. 16, No. 5, 09.1979, p. 1374-1378.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.
AU - Aspnes, D. E.
AU - Theeten, J. B.
AU - Chang, Robert P. H.
PY - 1979/9
Y1 - 1979/9
N2 - The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.
AB - The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.
UR - http://www.scopus.com/inward/record.url?scp=0018522331&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0018522331&partnerID=8YFLogxK
U2 - 10.1116/1.570202
DO - 10.1116/1.570202
M3 - Article
VL - 16
SP - 1374
EP - 1378
JO - Journal of Vacuum Science and Technology
JF - Journal of Vacuum Science and Technology
SN - 0022-5355
IS - 5
ER -