NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY.

D. E. Aspnes, J. B. Theeten, Robert P. H. Chang

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.

Original languageEnglish
Pages (from-to)1374-1378
Number of pages5
JournalJournal of vacuum science & technology
Volume16
Issue number5
DOIs
Publication statusPublished - Sep 1979

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Spectroscopic ellipsometry
Plasmas
Oxides
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

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NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY. / Aspnes, D. E.; Theeten, J. B.; Chang, Robert P. H.

In: Journal of vacuum science & technology, Vol. 16, No. 5, 09.1979, p. 1374-1378.

Research output: Contribution to journalArticle

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