Abstract
The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.
| Original language | English |
|---|---|
| Pages (from-to) | 1374-1378 |
| Number of pages | 5 |
| Journal | Journal of vacuum science & technology |
| Volume | 16 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - Sep 1979 |
ASJC Scopus subject areas
- Engineering(all)
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Aspnes, D. E., Theeten, J. B., & Chang, R. P. H. (1979). NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN Si OR GaAs AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY. Journal of vacuum science & technology, 16(5), 1374-1378. https://doi.org/10.1116/1.570202