Abstract
The mechanism by which spectroscopic ellipsometry is sensitive to semiconductor-dielectric interfaces is discussed, and a systematic method of obtaining overlayer and interface parameters via model fitting is presented. Applications to the Si/thermally grown SiO//2 interface shows 7. 7 plus or minus 2. 0 A of chemically mixed alpha -As present at GaAs/plasma-grown-oxide interface is dependent upon growth rate. Plasma oxides are shown to contain about 2% unoxidized alpha -As.
Original language | English |
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Pages (from-to) | 1374-1378 |
Number of pages | 5 |
Journal | Journal of vacuum science & technology |
Volume | 16 |
Issue number | 5 |
DOIs | |
Publication status | Published - Sep 1979 |
ASJC Scopus subject areas
- Engineering(all)