Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires

V. Dneprovskii; V. Karavansky; V. Klimov; D. Okorokov; Yu Vandishev

doi:10.1117/12.162756

Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires

V. Dneprovskii, V. Karavansky, V. Klimov, D. Okorokov, Yu Vandishev

Los Alamos National Laboratory

Research output: Contribution to journal › Conference article › peer-review

Abstract

Transmission spectra recovery of CdSe, CdS_xSe_1-x nanocrystals and porous silicon wires optically excited by ultrashort laser pulses have been studied with picosecond time resolution using pump and probe technique. The transitions between levels of electrons and holes spatially confined within nanocrystals and thin wires were observed as bleaching bands in nonlinear transmission spectra (saturation effect). Spectra and values of third order resonant susceptibility were determined for nanocrystals of different size and porous silicon using the experimentally measured differential transmission spectra.

Original language	English
Pages (from-to)	300-311
Number of pages	12
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1985
DOIs	https://doi.org/10.1117/12.162756
Publication status	Published - Jan 1 1993
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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abstract = "Transmission spectra recovery of CdSe, CdSxSe1-x nanocrystals and porous silicon wires optically excited by ultrashort laser pulses have been studied with picosecond time resolution using pump and probe technique. The transitions between levels of electrons and holes spatially confined within nanocrystals and thin wires were observed as bleaching bands in nonlinear transmission spectra (saturation effect). Spectra and values of third order resonant susceptibility were determined for nanocrystals of different size and porous silicon using the experimentally measured differential transmission spectra.",

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AU - Dneprovskii, V.

AU - Karavansky, V.

AU - Klimov, V.

AU - Okorokov, D.

AU - Vandishev, Yu

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Transmission spectra recovery of CdSe, CdSxSe1-x nanocrystals and porous silicon wires optically excited by ultrashort laser pulses have been studied with picosecond time resolution using pump and probe technique. The transitions between levels of electrons and holes spatially confined within nanocrystals and thin wires were observed as bleaching bands in nonlinear transmission spectra (saturation effect). Spectra and values of third order resonant susceptibility were determined for nanocrystals of different size and porous silicon using the experimentally measured differential transmission spectra.

AB - Transmission spectra recovery of CdSe, CdSxSe1-x nanocrystals and porous silicon wires optically excited by ultrashort laser pulses have been studied with picosecond time resolution using pump and probe technique. The transitions between levels of electrons and holes spatially confined within nanocrystals and thin wires were observed as bleaching bands in nonlinear transmission spectra (saturation effect). Spectra and values of third order resonant susceptibility were determined for nanocrystals of different size and porous silicon using the experimentally measured differential transmission spectra.

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EP - 311

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Y2 - 23 May 1993 through 28 May 1993

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Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires

Abstract

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