Nonlinear optics of quantum dot and quantum wire structures

Victor I Klimov, V. S. Dneprovskii, V. Karavanskii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Changes in the transmission of commercially available semiconductor doped glasses and porous silicon layers are studied by using picosecond pump and probe measurements. Bleaching bands attributed to the saturation of optical transitions in semiconductor nanostructures (crystallites or wires) are registered in time-resolved differential transmission spectra for both of the materials under investigation. It is found that porous silicon exhibits strong and fast optical nonlinearity (third-order nonlinear susceptibility is about 10-8 esu; transmission recovery time is 30-40 ps) which can be used for optical switching.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsNasser Peygambarian, Henry Everitt, Robert C. Eckardt, Dennis D. Lowenthal
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages102-111
Number of pages10
Volume2145
ISBN (Print)0819414409
Publication statusPublished - 1994
EventNonlinear Optics for High-Speed Electronics and Optical Frequency Conversion - Los Angeles, CA, USA
Duration: Jan 24 1994Jan 26 1994

Other

OtherNonlinear Optics for High-Speed Electronics and Optical Frequency Conversion
CityLos Angeles, CA, USA
Period1/24/941/26/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Klimov, V. I., Dneprovskii, V. S., & Karavanskii, V. (1994). Nonlinear optics of quantum dot and quantum wire structures. In N. Peygambarian, H. Everitt, R. C. Eckardt, & D. D. Lowenthal (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2145, pp. 102-111). Publ by Society of Photo-Optical Instrumentation Engineers.