Abstract
Changes in the transmission of commercially available semiconductor doped glasses and porous silicon layers are studied by using picosecond pump and probe measurements. Bleaching bands attributed to the saturation of optical transitions in semiconductor nanostructures (crystallites or wires) are registered in time-resolved differential transmission spectra for both of the materials under investigation. It is found that porous silicon exhibits strong and fast optical nonlinearity (third-order nonlinear susceptibility is about 10-8 esu; transmission recovery time is 30-40 ps) which can be used for optical switching.
Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | Nasser Peygambarian, Henry Everitt, Robert C. Eckardt, Dennis D. Lowenthal |
Publisher | Publ by Society of Photo-Optical Instrumentation Engineers |
Pages | 102-111 |
Number of pages | 10 |
Volume | 2145 |
ISBN (Print) | 0819414409 |
Publication status | Published - 1994 |
Event | Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion - Los Angeles, CA, USA Duration: Jan 24 1994 → Jan 26 1994 |
Other
Other | Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion |
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City | Los Angeles, CA, USA |
Period | 1/24/94 → 1/26/94 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics