Normal-state resistance fluctuations in high-Tc cuprate films

Li Liu, K. Zhang, H. M. Jaeger, D. B. Buchholz, R. P H Chang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We have measured 1/f resistance fluctuations at room temperature in YBa2Cu3Ox films as a function of oxygen content, x. The films were single phase, c-axis oriented and grown by pulsed organometallic-beam epitaxy on LaAlO3 substrates. In contrast to the monotonic increase of the film resistance with decreasing x, the normalized noise power was found to exhibit a sharp minimum at x=6.5. We attribute this behavior to vacancy creation in the Cu-O chains and discuss a simple model based on parallel conduction paths through both chains and planes.

Original languageEnglish
Pages (from-to)3679-3682
Number of pages4
JournalPhysical Review B
Volume49
Issue number5
DOIs
Publication statusPublished - 1994

Fingerprint

cuprates
Organometallics
Epitaxial growth
epitaxy
Vacancies
Oxygen
conduction
room temperature
oxygen
Substrates
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Normal-state resistance fluctuations in high-Tc cuprate films. / Liu, Li; Zhang, K.; Jaeger, H. M.; Buchholz, D. B.; Chang, R. P H.

In: Physical Review B, Vol. 49, No. 5, 1994, p. 3679-3682.

Research output: Contribution to journalArticle

Liu, Li ; Zhang, K. ; Jaeger, H. M. ; Buchholz, D. B. ; Chang, R. P H. / Normal-state resistance fluctuations in high-Tc cuprate films. In: Physical Review B. 1994 ; Vol. 49, No. 5. pp. 3679-3682.
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