Novel dielectric materials for organic electronics

Antonio Facchetti, Myung Han Yoon, He Yan, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (<IV), without serious leakage currents (<10 A/cm at IV).

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages177-182
Number of pages6
Volume871
Publication statusPublished - 2005
Event2005 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Other

Other2005 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/28/054/1/05

Fingerprint

Electronic equipment
Siloxanes
Organic field effect transistors
Management information systems
Polymer matrix
Leakage currents
Capacitance
Semiconductor materials
Fabrication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Facchetti, A., Yoon, M. H., Yan, H., & Marks, T. J. (2005). Novel dielectric materials for organic electronics. In Materials Research Society Symposium Proceedings (Vol. 871, pp. 177-182)

Novel dielectric materials for organic electronics. / Facchetti, Antonio; Yoon, Myung Han; Yan, He; Marks, Tobin J.

Materials Research Society Symposium Proceedings. Vol. 871 2005. p. 177-182.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Facchetti, A, Yoon, MH, Yan, H & Marks, TJ 2005, Novel dielectric materials for organic electronics. in Materials Research Society Symposium Proceedings. vol. 871, pp. 177-182, 2005 MRS Spring Meeting, San Francisco, CA, United States, 3/28/05.
Facchetti A, Yoon MH, Yan H, Marks TJ. Novel dielectric materials for organic electronics. In Materials Research Society Symposium Proceedings. Vol. 871. 2005. p. 177-182
Facchetti, Antonio ; Yoon, Myung Han ; Yan, He ; Marks, Tobin J. / Novel dielectric materials for organic electronics. Materials Research Society Symposium Proceedings. Vol. 871 2005. pp. 177-182
@inproceedings{18553978d31e4cd49a2631044b1d3c8e,
title = "Novel dielectric materials for organic electronics",
abstract = "We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (<IV), without serious leakage currents (<10 A/cm at IV).",
author = "Antonio Facchetti and Yoon, {Myung Han} and He Yan and Marks, {Tobin J}",
year = "2005",
language = "English",
isbn = "155899825X",
volume = "871",
pages = "177--182",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Novel dielectric materials for organic electronics

AU - Facchetti, Antonio

AU - Yoon, Myung Han

AU - Yan, He

AU - Marks, Tobin J

PY - 2005

Y1 - 2005

N2 - We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (<IV), without serious leakage currents (<10 A/cm at IV).

AB - We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (<IV), without serious leakage currents (<10 A/cm at IV).

UR - http://www.scopus.com/inward/record.url?scp=34249982943&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249982943&partnerID=8YFLogxK

M3 - Conference contribution

SN - 155899825X

SN - 9781558998254

VL - 871

SP - 177

EP - 182

BT - Materials Research Society Symposium Proceedings

ER -