Novel dielectric materials for organic electronics

Antonio Facchetti, Myung Han Yoon, He Yan, Tobin J. Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present our latest results on the design and fabrication of very high capacitance dielectric materials for organic field-effect transistors. We will show that utilization of appropriate self-assembling siloxane building blocks and polymer matrices allows solution-processed, pinhole-free organic dielectrics. Electrical (MIS, TFT) data demonstrate that these insulators can be efficiently integrated into large TFT structures. These devices function for both p- and n-channel semiconductors, the molecular components of which exhibit greatly different core structures and substituent functionalities. Substantial TFT response is achieved al: very low operational biases (< IV), without serious leakage currents (< 10 A/cm at IV).

Original languageEnglish
Title of host publicationOrganic Thin-Film Electronics
Pages177-182
Number of pages6
Publication statusPublished - Dec 1 2005
Event2005 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume871
ISSN (Print)0272-9172

Other

Other2005 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/28/054/1/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Facchetti, A., Yoon, M. H., Yan, H., & Marks, T. J. (2005). Novel dielectric materials for organic electronics. In Organic Thin-Film Electronics (pp. 177-182). (Materials Research Society Symposium Proceedings; Vol. 871).