Abstract
We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.
| Original language | English |
|---|---|
| Pages (from-to) | 526-529 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 9 |
| Issue number | 5 SUPPL |
| Publication status | Published - May 1994 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
Cite this
Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses. / Lovering, D. J.; Phillips, R. T.; Grey, R.; Crystall, B.; Rumbles, Gary.
In: Semiconductor Science and Technology, Vol. 9, No. 5 SUPPL, 05.1994, p. 526-529.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses
AU - Lovering, D. J.
AU - Phillips, R. T.
AU - Grey, R.
AU - Crystall, B.
AU - Rumbles, Gary
PY - 1994/5
Y1 - 1994/5
N2 - We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.
AB - We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.
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UR - http://www.scopus.com/inward/citedby.url?scp=0028425360&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0028425360
VL - 9
SP - 526
EP - 529
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 5 SUPPL
ER -