Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses

D. J. Lovering; R. T. Phillips; R. Grey; B. Crystall; Gary Rumbles

Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses

D. J. Lovering, R. T. Phillips, R. Grey, B. Crystall, Gary Rumbles

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.

Original language	English
Pages (from-to)	526-529
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 SUPPL
Publication status	Published - May 1994

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Materials Science(all)
Electronic, Optical and Magnetic Materials

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Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses. / Lovering, D. J.; Phillips, R. T.; Grey, R.; Crystall, B.; Rumbles, Gary.

In: Semiconductor Science and Technology, Vol. 9, No. 5 SUPPL, 05.1994, p. 526-529.

Research output: Contribution to journal › Article › peer-review

@article{86ae8d51fa174b1a9663c92b59cc5faf,

title = "Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses",

abstract = "We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.",

author = "Lovering, {D. J.} and Phillips, {R. T.} and R. Grey and B. Crystall and Gary Rumbles",

year = "1994",

month = may,

language = "English",

volume = "9",

pages = "526--529",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "5 SUPPL",

}

TY - JOUR

T1 - Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses

AU - Lovering, D. J.

AU - Phillips, R. T.

AU - Grey, R.

AU - Crystall, B.

AU - Rumbles, Gary

PY - 1994/5

Y1 - 1994/5

N2 - We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.

AB - We report the use of a time-resolved transient-grating technique to study the in-plane ambipolar diffusion coefficient and interwell tunnelling probability for exctions in a number of multiple quantum well samples. Our specimens were selected with barrier thicknesses ranging from 14 to 141 A thus giving complete coverage of the transition from isolated quantum well to superlattice behaviour. Two types of MBE growth condition were used giving rise to samples with low or high surface defect density. The surface defect density had a strong effect on the in-plane mobility but not the tunnelling probability. The samples show surprisingly strong interwell coupling even with the thickest barrier. Which we attribute to defect assisted tunnelling.

UR - http://www.scopus.com/inward/record.url?scp=0028425360&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028425360&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0028425360

VL - 9

SP - 526

EP - 529

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5 SUPPL

ER -

Novel optical study of the tunnelling rate and ambipolar transport characteristics of excitons in superlattices with a variety of barrier thicknesses

Abstract

ASJC Scopus subject areas

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