Novel photoanode architectures and tunneling barriers

Thomas W. Hamann, Alex B.F. Martinson, Jeffrey W. Elam, Michael J. Pellin, Joseph T. Hupp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

Original languageEnglish
Title of host publication234th ACS National Meeting, Abstracts of Scientific Papers
Publication statusPublished - Dec 31 2007
Event234th ACS National Meeting - Boston, MA, United States
Duration: Aug 19 2007Aug 23 2007

Publication series

NameACS National Meeting Book of Abstracts
ISSN (Print)0065-7727

Other

Other234th ACS National Meeting
CountryUnited States
CityBoston, MA
Period8/19/078/23/07

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ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Hamann, T. W., Martinson, A. B. F., Elam, J. W., Pellin, M. J., & Hupp, J. T. (2007). Novel photoanode architectures and tunneling barriers. In 234th ACS National Meeting, Abstracts of Scientific Papers (ACS National Meeting Book of Abstracts).