Abstract
Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
| Original language | English |
|---|---|
| Title of host publication | ACS National Meeting Book of Abstracts |
| Publication status | Published - 2007 |
| Event | 234th ACS National Meeting - Boston, MA, United States Duration: Aug 19 2007 → Aug 23 2007 |
Other
| Other | 234th ACS National Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 8/19/07 → 8/23/07 |
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ASJC Scopus subject areas
- Chemistry(all)
Cite this
Novel photoanode architectures and tunneling barriers. / Hamann, Thomas W.; Martinson, Alex B F; Elam, Jeffrey W.; Pellin, Michael J.; Hupp, Joseph T.
ACS National Meeting Book of Abstracts. 2007.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Novel photoanode architectures and tunneling barriers
AU - Hamann, Thomas W.
AU - Martinson, Alex B F
AU - Elam, Jeffrey W.
AU - Pellin, Michael J.
AU - Hupp, Joseph T
PY - 2007
Y1 - 2007
N2 - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
AB - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
UR - http://www.scopus.com/inward/record.url?scp=37349012695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=37349012695&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:37349012695
SN - 0841269556
SN - 9780841269552
BT - ACS National Meeting Book of Abstracts
ER -