Novel photoanode architectures and tunneling barriers

Thomas W. Hamann, Alex B F Martinson, Jeffrey W. Elam, Michael J. Pellin, Joseph T Hupp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

Original languageEnglish
Title of host publicationACS National Meeting Book of Abstracts
Publication statusPublished - 2007
Event234th ACS National Meeting - Boston, MA, United States
Duration: Aug 19 2007Aug 23 2007

Other

Other234th ACS National Meeting
CountryUnited States
CityBoston, MA
Period8/19/078/23/07

Fingerprint

Aluminum Oxide
Atomic layer deposition
Nanorods
Semiconductor materials
Electrodes
Networks (circuits)
Dye-sensitized solar cells

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Hamann, T. W., Martinson, A. B. F., Elam, J. W., Pellin, M. J., & Hupp, J. T. (2007). Novel photoanode architectures and tunneling barriers. In ACS National Meeting Book of Abstracts

Novel photoanode architectures and tunneling barriers. / Hamann, Thomas W.; Martinson, Alex B F; Elam, Jeffrey W.; Pellin, Michael J.; Hupp, Joseph T.

ACS National Meeting Book of Abstracts. 2007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hamann, TW, Martinson, ABF, Elam, JW, Pellin, MJ & Hupp, JT 2007, Novel photoanode architectures and tunneling barriers. in ACS National Meeting Book of Abstracts. 234th ACS National Meeting, Boston, MA, United States, 8/19/07.
Hamann TW, Martinson ABF, Elam JW, Pellin MJ, Hupp JT. Novel photoanode architectures and tunneling barriers. In ACS National Meeting Book of Abstracts. 2007
Hamann, Thomas W. ; Martinson, Alex B F ; Elam, Jeffrey W. ; Pellin, Michael J. ; Hupp, Joseph T. / Novel photoanode architectures and tunneling barriers. ACS National Meeting Book of Abstracts. 2007.
@inproceedings{6a138526c7124eab9c777a960cf4a50b,
title = "Novel photoanode architectures and tunneling barriers",
abstract = "Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.",
author = "Hamann, {Thomas W.} and Martinson, {Alex B F} and Elam, {Jeffrey W.} and Pellin, {Michael J.} and Hupp, {Joseph T}",
year = "2007",
language = "English",
isbn = "0841269556",
booktitle = "ACS National Meeting Book of Abstracts",

}

TY - GEN

T1 - Novel photoanode architectures and tunneling barriers

AU - Hamann, Thomas W.

AU - Martinson, Alex B F

AU - Elam, Jeffrey W.

AU - Pellin, Michael J.

AU - Hupp, Joseph T

PY - 2007

Y1 - 2007

N2 - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

AB - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.

UR - http://www.scopus.com/inward/record.url?scp=37349012695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37349012695&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:37349012695

SN - 0841269556

SN - 9780841269552

BT - ACS National Meeting Book of Abstracts

ER -