Abstract
Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
| Original language | English |
|---|---|
| Title of host publication | 234th ACS National Meeting, Abstracts of Scientific Papers |
| Publication status | Published - Dec 31 2007 |
| Event | 234th ACS National Meeting - Boston, MA, United States Duration: Aug 19 2007 → Aug 23 2007 |
Publication series
| Name | ACS National Meeting Book of Abstracts |
|---|---|
| ISSN (Print) | 0065-7727 |
Other
| Other | 234th ACS National Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 8/19/07 → 8/23/07 |
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ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)
Cite this
Hamann, T. W., Martinson, A. B. F., Elam, J. W., Pellin, M. J., & Hupp, J. T. (2007). Novel photoanode architectures and tunneling barriers. In 234th ACS National Meeting, Abstracts of Scientific Papers (ACS National Meeting Book of Abstracts).