TY - GEN
T1 - Novel photoanode architectures and tunneling barriers
AU - Hamann, Thomas W.
AU - Martinson, Alex B.F.
AU - Elam, Jeffrey W.
AU - Pellin, Michael J.
AU - Hupp, Joseph T.
PY - 2007/12/31
Y1 - 2007/12/31
N2 - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
AB - Atomic layer deposition, ALD, was used to fabricate novel high surface area ZnO photoanodes for use in dye sensitized solar cells, DSSCs. Photovoltaic performance was monitored as a function of the semiconductor thickness deposited. Excellent overall efficiencies and the highest reported open circuit potentials were found for ZnO DSSCs. ALD was also used to coat alumina barrier layers on ZnO nanorod electrodes in DSSCs. The conformal thin layer of alumina was found to reduce recombination reactions without significant reduction in current.
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M3 - Conference contribution
AN - SCOPUS:37349012695
SN - 0841269556
SN - 9780841269552
T3 - ACS National Meeting Book of Abstracts
BT - 234th ACS National Meeting, Abstracts of Scientific Papers
T2 - 234th ACS National Meeting
Y2 - 19 August 2007 through 23 August 2007
ER -