Novel semiconductor integrated superluminescent source

Yongsheng Zhao; Guotong Du; Xiuying Jiang; Gregory Devane; Weihua Han; Xuemei Li; Junfeng Song; Dingsan Gao; Kathleen A. Stuir; Robert P. H. Chang

Novel semiconductor integrated superluminescent source

Yongsheng Zhao, Guotong Du, Xiuying Jiang, Gregory Devane, Weihua Han, Xuemei Li, Junfeng Song, Dingsan Gao, Kathleen A. Stuir, Robert P. H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

Abstract

In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.

Original language	English
Pages (from-to)	5-7
Number of pages	3
Journal	Gaojishu Tongxin/High Technology Letters
Volume	8
Issue number	1
Publication status	Published - 1998

ASJC Scopus subject areas

Engineering(all)

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title = "Novel semiconductor integrated superluminescent source",

abstract = "In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.",

author = "Yongsheng Zhao and Guotong Du and Xiuying Jiang and Gregory Devane and Weihua Han and Xuemei Li and Junfeng Song and Dingsan Gao and Stuir, {Kathleen A.} and Chang, {Robert P. H.}",

year = "1998",

language = "English",

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journal = "Gaojishu Tongxin/High Technology Letters",

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T1 - Novel semiconductor integrated superluminescent source

AU - Zhao, Yongsheng

AU - Du, Guotong

AU - Jiang, Xiuying

AU - Devane, Gregory

AU - Han, Weihua

AU - Li, Xuemei

AU - Song, Junfeng

AU - Gao, Dingsan

AU - Stuir, Kathleen A.

AU - Chang, Robert P. H.

PY - 1998

Y1 - 1998

N2 - In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.

AB - In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.

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SN - 1002-0470

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