Abstract
In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.
Original language | English |
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Pages (from-to) | 5-7 |
Number of pages | 3 |
Journal | Gaojishu Tongxin/High Technology Letters |
Volume | 8 |
Issue number | 1 |
Publication status | Published - 1998 |
ASJC Scopus subject areas
- Engineering(all)