Abstract
In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.
| Original language | English |
|---|---|
| Pages (from-to) | 5-7 |
| Number of pages | 3 |
| Journal | Gaojishu Tongxin/High Technology Letters |
| Volume | 8 |
| Issue number | 1 |
| Publication status | Published - 1998 |
ASJC Scopus subject areas
- Engineering(all)
Fingerprint Dive into the research topics of 'Novel semiconductor integrated superluminescent source'. Together they form a unique fingerprint.
Cite this
Zhao, Y., Du, G., Jiang, X., Devane, G., Han, W., Li, X., Song, J., Gao, D., Stuir, K. A., & Chang, R. P. H. (1998). Novel semiconductor integrated superluminescent source. Gaojishu Tongxin/High Technology Letters, 8(1), 5-7.