Abstract
In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.
| Original language | English |
|---|---|
| Pages (from-to) | 5-7 |
| Number of pages | 3 |
| Journal | Gaojishu Tongxin/High Technology Letters |
| Volume | 8 |
| Issue number | 1 |
| Publication status | Published - 1998 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Novel semiconductor integrated superluminescent source. / Zhao, Yongsheng; Du, Guotong; Jiang, Xiuying; Devane, Gregory; Han, Weihua; Li, Xuemei; Song, Junfeng; Gao, Dingsan; Stuir, Kathleen A.; Chang, Robert P. H.
In: Gaojishu Tongxin/High Technology Letters, Vol. 8, No. 1, 1998, p. 5-7.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Novel semiconductor integrated superluminescent source
AU - Zhao, Yongsheng
AU - Du, Guotong
AU - Jiang, Xiuying
AU - Devane, Gregory
AU - Han, Weihua
AU - Li, Xuemei
AU - Song, Junfeng
AU - Gao, Dingsan
AU - Stuir, Kathleen A.
AU - Chang, Robert P. H.
PY - 1998
Y1 - 1998
N2 - In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.
AB - In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.
UR - http://www.scopus.com/inward/record.url?scp=0032261497&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032261497&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032261497
VL - 8
SP - 5
EP - 7
JO - Gaojishu Tongxin/High Technology Letters
JF - Gaojishu Tongxin/High Technology Letters
SN - 1002-0470
IS - 1
ER -