Novel semiconductor integrated superluminescent source

Yongsheng Zhao, Guotong Du, Xiuying Jiang, Gregory Devane, Weihua Han, Xuemei Li, Junfeng Song, Dingsan Gao, Kathleen A. Stuir, Robert P. H. Chang

Research output: Contribution to journalArticle

Abstract

In order to increase the superluminescent power effectively and satisfy the need for wide uses, a novel idea about monolithic integration of superluminescent diode with the tapered semiconductor amplifier has been suggested. The device was fabricated by using an AlGaAs SQW heterostructure wafer and gain-guide oxide-stripe structures. The experimental results show that the integrated superluminescent device can increase the out power notably. The device will become a new type of superluminescent source.

Original languageEnglish
Pages (from-to)5-7
Number of pages3
JournalGaojishu Tongxin/High Technology Letters
Volume8
Issue number1
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Zhao, Y., Du, G., Jiang, X., Devane, G., Han, W., Li, X., Song, J., Gao, D., Stuir, K. A., & Chang, R. P. H. (1998). Novel semiconductor integrated superluminescent source. Gaojishu Tongxin/High Technology Letters, 8(1), 5-7.