Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance

Jangdae Youn, Ming Chou Chen, You Jhih Liang, Hui Huang, Rocio Ponce Ortiz, Choongik Kim, Charlotte Stern, Tarng Shiang Hu, Liang Hsiang Chen, Jing Yi Yan, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.

Original languageEnglish
Pages (from-to)5031-5041
Number of pages11
JournalChemistry of Materials
Volume22
Issue number17
DOIs
Publication statusPublished - Sep 14 2010

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Organic field effect transistors
Film growth
Thin film transistors
Semiconductor materials
Thin films
Substrates
Fluxes
Surface treatment
Crystal structure
Single crystals
Ions
Derivatives
X ray diffraction
Temperature

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance. / Youn, Jangdae; Chen, Ming Chou; Liang, You Jhih; Huang, Hui; Ortiz, Rocio Ponce; Kim, Choongik; Stern, Charlotte; Hu, Tarng Shiang; Chen, Liang Hsiang; Yan, Jing Yi; Facchetti, Antonio; Marks, Tobin J.

In: Chemistry of Materials, Vol. 22, No. 17, 14.09.2010, p. 5031-5041.

Research output: Contribution to journalArticle

Youn, Jangdae ; Chen, Ming Chou ; Liang, You Jhih ; Huang, Hui ; Ortiz, Rocio Ponce ; Kim, Choongik ; Stern, Charlotte ; Hu, Tarng Shiang ; Chen, Liang Hsiang ; Yan, Jing Yi ; Facchetti, Antonio ; Marks, Tobin J. / Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance. In: Chemistry of Materials. 2010 ; Vol. 22, No. 17. pp. 5031-5041.
@article{35d41d12cc7142a3aec59d893fa1e56a,
title = "Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance",
abstract = "A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.",
author = "Jangdae Youn and Chen, {Ming Chou} and Liang, {You Jhih} and Hui Huang and Ortiz, {Rocio Ponce} and Choongik Kim and Charlotte Stern and Hu, {Tarng Shiang} and Chen, {Liang Hsiang} and Yan, {Jing Yi} and Antonio Facchetti and Marks, {Tobin J}",
year = "2010",
month = "9",
day = "14",
doi = "10.1021/cm101435s",
language = "English",
volume = "22",
pages = "5031--5041",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "17",

}

TY - JOUR

T1 - Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance

AU - Youn, Jangdae

AU - Chen, Ming Chou

AU - Liang, You Jhih

AU - Huang, Hui

AU - Ortiz, Rocio Ponce

AU - Kim, Choongik

AU - Stern, Charlotte

AU - Hu, Tarng Shiang

AU - Chen, Liang Hsiang

AU - Yan, Jing Yi

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2010/9/14

Y1 - 2010/9/14

N2 - A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.

AB - A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.

UR - http://www.scopus.com/inward/record.url?scp=77956410407&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956410407&partnerID=8YFLogxK

U2 - 10.1021/cm101435s

DO - 10.1021/cm101435s

M3 - Article

AN - SCOPUS:77956410407

VL - 22

SP - 5031

EP - 5041

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 17

ER -