Abstract
A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.
| Original language | English |
|---|---|
| Pages (from-to) | 5031-5041 |
| Number of pages | 11 |
| Journal | Chemistry of Materials |
| Volume | 22 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Sep 14 2010 |
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ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)
- Chemistry(all)
Cite this
Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance. / Youn, Jangdae; Chen, Ming Chou; Liang, You Jhih; Huang, Hui; Ortiz, Rocio Ponce; Kim, Choongik; Stern, Charlotte; Hu, Tarng Shiang; Chen, Liang Hsiang; Yan, Jing Yi; Facchetti, Antonio; Marks, Tobin J.
In: Chemistry of Materials, Vol. 22, No. 17, 14.09.2010, p. 5031-5041.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Novel semiconductors based on functionalized benzo[ d, d′]thieno[3,2- b;4,5- b′]dithiophenes and the effects of thin film growth conditions on organic field effect transistor performance
AU - Youn, Jangdae
AU - Chen, Ming Chou
AU - Liang, You Jhih
AU - Huang, Hui
AU - Ortiz, Rocio Ponce
AU - Kim, Choongik
AU - Stern, Charlotte
AU - Hu, Tarng Shiang
AU - Chen, Liang Hsiang
AU - Yan, Jing Yi
AU - Facchetti, Antonio
AU - Marks, Tobin J
PY - 2010/9/14
Y1 - 2010/9/14
N2 - A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.
AB - A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (P) and benzothiophenyl (BT), were synthesized and characterized. A facile, one-pot synthesis of BTDT was developed which enables the efficient realization of a new BTDT-based semiconductor series for organic thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray diffraction. Various combinations of dielectric surface treatment methods, substrate temperature, and deposition flux rate sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good OTFT performance, with mobility greater than 0.70 cm2V-1 s-1 and Ion/I off greater than 108.
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U2 - 10.1021/cm101435s
DO - 10.1021/cm101435s
M3 - Article
AN - SCOPUS:77956410407
VL - 22
SP - 5031
EP - 5041
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 17
ER -