Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li, Viacheslav Manichev, Fangzhou Yu, Danielle Hutchison, May Nyman, Torgny Gustafsson, Leonard C Feldman, Eric Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

Original languageEnglish
Title of host publicationAdvances in Patterning Materials and Processes XXXV
PublisherSPIE
Volume10586
ISBN (Electronic)9781510616646
DOIs
Publication statusPublished - Jan 1 2018
EventAdvances in Patterning Materials and Processes XXXV 2018 - San Jose, United States
Duration: Feb 26 2018Mar 1 2018

Other

OtherAdvances in Patterning Materials and Processes XXXV 2018
CountryUnited States
CitySan Jose
Period2/26/183/1/18

Fingerprint

Tin
Photoresist
Photoresists
Patterning
high aspect ratio
photoresists
Aspect Ratio
Aspect ratio
Photons
Ion beam lithography
Extreme ultraviolet lithography
Thin films
Helium
Thin Films
Dose
Photon
Substrates
lithography
Substrate
tin compounds

Keywords

  • High aspect ratio
  • HIML
  • Monte Carlo simulation
  • secondary electrons
  • substrate dependence
  • thickness dependence
  • β-NaSn13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Li, M., Manichev, V., Yu, F., Hutchison, D., Nyman, M., Gustafsson, T., ... Garfunkel, E. (2018). Novel Sn-based photoresist for high aspect ratio patterning. In Advances in Patterning Materials and Processes XXXV (Vol. 10586). [105860K] SPIE. https://doi.org/10.1117/12.2297440

Novel Sn-based photoresist for high aspect ratio patterning. / Li, Mengjun; Manichev, Viacheslav; Yu, Fangzhou; Hutchison, Danielle; Nyman, May; Gustafsson, Torgny; Feldman, Leonard C; Garfunkel, Eric.

Advances in Patterning Materials and Processes XXXV. Vol. 10586 SPIE, 2018. 105860K.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, M, Manichev, V, Yu, F, Hutchison, D, Nyman, M, Gustafsson, T, Feldman, LC & Garfunkel, E 2018, Novel Sn-based photoresist for high aspect ratio patterning. in Advances in Patterning Materials and Processes XXXV. vol. 10586, 105860K, SPIE, Advances in Patterning Materials and Processes XXXV 2018, San Jose, United States, 2/26/18. https://doi.org/10.1117/12.2297440
Li M, Manichev V, Yu F, Hutchison D, Nyman M, Gustafsson T et al. Novel Sn-based photoresist for high aspect ratio patterning. In Advances in Patterning Materials and Processes XXXV. Vol. 10586. SPIE. 2018. 105860K https://doi.org/10.1117/12.2297440
Li, Mengjun ; Manichev, Viacheslav ; Yu, Fangzhou ; Hutchison, Danielle ; Nyman, May ; Gustafsson, Torgny ; Feldman, Leonard C ; Garfunkel, Eric. / Novel Sn-based photoresist for high aspect ratio patterning. Advances in Patterning Materials and Processes XXXV. Vol. 10586 SPIE, 2018.
@inproceedings{b3e3fcb2b85a4443b7c258714757bfa0,
title = "Novel Sn-based photoresist for high aspect ratio patterning",
abstract = "Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.",
keywords = "High aspect ratio, HIML, Monte Carlo simulation, secondary electrons, substrate dependence, thickness dependence, β-NaSn13",
author = "Mengjun Li and Viacheslav Manichev and Fangzhou Yu and Danielle Hutchison and May Nyman and Torgny Gustafsson and Feldman, {Leonard C} and Eric Garfunkel",
year = "2018",
month = "1",
day = "1",
doi = "10.1117/12.2297440",
language = "English",
volume = "10586",
booktitle = "Advances in Patterning Materials and Processes XXXV",
publisher = "SPIE",

}

TY - GEN

T1 - Novel Sn-based photoresist for high aspect ratio patterning

AU - Li, Mengjun

AU - Manichev, Viacheslav

AU - Yu, Fangzhou

AU - Hutchison, Danielle

AU - Nyman, May

AU - Gustafsson, Torgny

AU - Feldman, Leonard C

AU - Garfunkel, Eric

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

AB - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

KW - High aspect ratio

KW - HIML

KW - Monte Carlo simulation

KW - secondary electrons

KW - substrate dependence

KW - thickness dependence

KW - β-NaSn13

UR - http://www.scopus.com/inward/record.url?scp=85047825869&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047825869&partnerID=8YFLogxK

U2 - 10.1117/12.2297440

DO - 10.1117/12.2297440

M3 - Conference contribution

AN - SCOPUS:85047825869

VL - 10586

BT - Advances in Patterning Materials and Processes XXXV

PB - SPIE

ER -