Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li, Viacheslav Manichev, Fangzhou Yu, Danielle Hutchison, May Nyman, Torgny Gustafsson, Leonard C. Feldman, Eric L. Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

Original languageEnglish
Title of host publicationAdvances in Patterning Materials and Processes XXXV
EditorsChristoph K. Hohle
PublisherSPIE
ISBN (Electronic)9781510616646
DOIs
Publication statusPublished - 2018
EventAdvances in Patterning Materials and Processes XXXV 2018 - San Jose, United States
Duration: Feb 26 2018Mar 1 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10586
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherAdvances in Patterning Materials and Processes XXXV 2018
CountryUnited States
CitySan Jose
Period2/26/183/1/18

Keywords

  • HIML
  • High aspect ratio
  • Monte Carlo simulation
  • secondary electrons
  • substrate dependence
  • thickness dependence
  • β-NaSn13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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