Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li; Viacheslav Manichev; Fangzhou Yu; Danielle Hutchison; May Nyman; Torgny Gustafsson; Leonard C. Feldman; Eric L. Garfunkel

doi:10.1117/12.2297440

Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li, Viacheslav Manichev, Fangzhou Yu, Danielle Hutchison, May Nyman, Torgny Gustafsson, Leonard C. Feldman, Eric L. Garfunkel

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn¹³ ([NaO⁴(BuSn)¹²(OH)³(O)⁹(OCH³)¹²(Sn(H²O)²)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

Original language	English
Title of host publication	Advances in Patterning Materials and Processes XXXV
Editors	Christoph K. Hohle
Publisher	SPIE
ISBN (Electronic)	9781510616646
DOIs	https://doi.org/10.1117/12.2297440
Publication status	Published - 2018
Event	Advances in Patterning Materials and Processes XXXV 2018 - San Jose, United States Duration: Feb 26 2018 → Mar 1 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10586
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Advances in Patterning Materials and Processes XXXV 2018
Country	United States
City	San Jose
Period	2/26/18 → 3/1/18

Keywords

HIML
High aspect ratio
Monte Carlo simulation
secondary electrons
substrate dependence
thickness dependence
β-NaSn13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2297440

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Cite this

Li, M., Manichev, V., Yu, F., Hutchison, D., Nyman, M., Gustafsson, T., Feldman, L. C., & Garfunkel, E. L. (2018). Novel Sn-based photoresist for high aspect ratio patterning. In C. K. Hohle (Ed.), Advances in Patterning Materials and Processes XXXV [105860K] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10586). SPIE. https://doi.org/10.1117/12.2297440

Novel Sn-based photoresist for high aspect ratio patterning. / Li, Mengjun; Manichev, Viacheslav; Yu, Fangzhou; Hutchison, Danielle; Nyman, May; Gustafsson, Torgny; Feldman, Leonard C.; Garfunkel, Eric L.

Advances in Patterning Materials and Processes XXXV. ed. / Christoph K. Hohle. SPIE, 2018. 105860K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10586).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Li, M, Manichev, V, Yu, F, Hutchison, D, Nyman, M, Gustafsson, T, Feldman, LC & Garfunkel, EL 2018, Novel Sn-based photoresist for high aspect ratio patterning. in CK Hohle (ed.), Advances in Patterning Materials and Processes XXXV., 105860K, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10586, SPIE, Advances in Patterning Materials and Processes XXXV 2018, San Jose, United States, 2/26/18. https://doi.org/10.1117/12.2297440

Li, Mengjun ; Manichev, Viacheslav ; Yu, Fangzhou ; Hutchison, Danielle ; Nyman, May ; Gustafsson, Torgny ; Feldman, Leonard C. ; Garfunkel, Eric L. / Novel Sn-based photoresist for high aspect ratio patterning. Advances in Patterning Materials and Processes XXXV. editor / Christoph K. Hohle. SPIE, 2018. (Proceedings of SPIE - The International Society for Optical Engineering).

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abstract = "Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.",

keywords = "HIML, High aspect ratio, Monte Carlo simulation, secondary electrons, substrate dependence, thickness dependence, β-NaSn13",

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note = "Funding Information: The authors gratefully acknowledge the support of the National Science Foundation via the Center for Sustainable Materials Chemistry (an NSF-Center for Chemical Innovation), under Grant CHE-1606982.; Advances in Patterning Materials and Processes XXXV 2018 ; Conference date: 26-02-2018 Through 01-03-2018",

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AU - Gustafsson, Torgny

AU - Feldman, Leonard C.

AU - Garfunkel, Eric L.

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N2 - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

AB - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

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