Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li; Viacheslav Manichev; Fangzhou Yu; Danielle Hutchison; May Nyman; Torgny Gustafsson; Leonard C Feldman; Eric Garfunkel

doi:10.1117/12.2297440

Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li, Viacheslav Manichev, Fangzhou Yu, Danielle Hutchison, May Nyman, Torgny Gustafsson, Leonard C Feldman, Eric Garfunkel

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn¹³ ([NaO⁴(BuSn)¹²(OH)³(O)⁹(OCH³)¹²(Sn(H²O)²)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

Original language	English
Title of host publication	Advances in Patterning Materials and Processes XXXV
Publisher	SPIE
Volume	10586
ISBN (Electronic)	9781510616646
DOIs	https://doi.org/10.1117/12.2297440
Publication status	Published - Jan 1 2018
Event	Advances in Patterning Materials and Processes XXXV 2018 - San Jose, United States Duration: Feb 26 2018 → Mar 1 2018

Other

Other	Advances in Patterning Materials and Processes XXXV 2018
Country	United States
City	San Jose
Period	2/26/18 → 3/1/18

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Keywords

High aspect ratio
HIML
Monte Carlo simulation
secondary electrons
substrate dependence
thickness dependence
β-NaSn13

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Li, M., Manichev, V., Yu, F., Hutchison, D., Nyman, M., Gustafsson, T., Feldman, L. C., & Garfunkel, E. (2018). Novel Sn-based photoresist for high aspect ratio patterning. In Advances in Patterning Materials and Processes XXXV (Vol. 10586). [105860K] SPIE. https://doi.org/10.1117/12.2297440

Novel Sn-based photoresist for high aspect ratio patterning. / Li, Mengjun; Manichev, Viacheslav; Yu, Fangzhou; Hutchison, Danielle; Nyman, May; Gustafsson, Torgny; Feldman, Leonard C ; Garfunkel, Eric.

Advances in Patterning Materials and Processes XXXV. Vol. 10586 SPIE, 2018. 105860K.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

AB - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

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Access to Document

10.1117/12.2297440