@inproceedings{b3e3fcb2b85a4443b7c258714757bfa0,
title = "Novel Sn-based photoresist for high aspect ratio patterning",
abstract = "Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.",
keywords = "HIML, High aspect ratio, Monte Carlo simulation, secondary electrons, substrate dependence, thickness dependence, β-NaSn13",
author = "Mengjun Li and Viacheslav Manichev and Fangzhou Yu and Danielle Hutchison and May Nyman and Torgny Gustafsson and Feldman, {Leonard C.} and Garfunkel, {Eric L.}",
note = "Funding Information: The authors gratefully acknowledge the support of the National Science Foundation via the Center for Sustainable Materials Chemistry (an NSF-Center for Chemical Innovation), under Grant CHE-1606982.; Advances in Patterning Materials and Processes XXXV 2018 ; Conference date: 26-02-2018 Through 01-03-2018",
year = "2018",
doi = "10.1117/12.2297440",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Hohle, {Christoph K.}",
booktitle = "Advances in Patterning Materials and Processes XXXV",
}