Novel Sn-based photoresist for high aspect ratio patterning

Mengjun Li, Viacheslav Manichev, Fangzhou Yu, Danielle Hutchison, May Nyman, Torgny Gustafsson, Leonard C Feldman, Eric Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.

Original languageEnglish
Title of host publicationAdvances in Patterning Materials and Processes XXXV
PublisherSPIE
Volume10586
ISBN (Electronic)9781510616646
DOIs
Publication statusPublished - Jan 1 2018
EventAdvances in Patterning Materials and Processes XXXV 2018 - San Jose, United States
Duration: Feb 26 2018Mar 1 2018

Other

OtherAdvances in Patterning Materials and Processes XXXV 2018
CountryUnited States
CitySan Jose
Period2/26/183/1/18

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Keywords

  • High aspect ratio
  • HIML
  • Monte Carlo simulation
  • secondary electrons
  • substrate dependence
  • thickness dependence
  • β-NaSn13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Li, M., Manichev, V., Yu, F., Hutchison, D., Nyman, M., Gustafsson, T., Feldman, L. C., & Garfunkel, E. (2018). Novel Sn-based photoresist for high aspect ratio patterning. In Advances in Patterning Materials and Processes XXXV (Vol. 10586). [105860K] SPIE. https://doi.org/10.1117/12.2297440