Abstract
Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.
| Original language | English |
|---|---|
| Title of host publication | Advances in Patterning Materials and Processes XXXV |
| Publisher | SPIE |
| Volume | 10586 |
| ISBN (Electronic) | 9781510616646 |
| DOIs | |
| Publication status | Published - Jan 1 2018 |
| Event | Advances in Patterning Materials and Processes XXXV 2018 - San Jose, United States Duration: Feb 26 2018 → Mar 1 2018 |
Other
| Other | Advances in Patterning Materials and Processes XXXV 2018 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 2/26/18 → 3/1/18 |
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Keywords
- High aspect ratio
- HIML
- Monte Carlo simulation
- secondary electrons
- substrate dependence
- thickness dependence
- β-NaSn13
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Novel Sn-based photoresist for high aspect ratio patterning. / Li, Mengjun; Manichev, Viacheslav; Yu, Fangzhou; Hutchison, Danielle; Nyman, May; Gustafsson, Torgny; Feldman, Leonard C; Garfunkel, Eric.
Advances in Patterning Materials and Processes XXXV. Vol. 10586 SPIE, 2018. 105860K.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Novel Sn-based photoresist for high aspect ratio patterning
AU - Li, Mengjun
AU - Manichev, Viacheslav
AU - Yu, Fangzhou
AU - Hutchison, Danielle
AU - Nyman, May
AU - Gustafsson, Torgny
AU - Feldman, Leonard C
AU - Garfunkel, Eric
PY - 2018/1/1
Y1 - 2018/1/1
N2 - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.
AB - Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (∼92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ∼ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.
KW - High aspect ratio
KW - HIML
KW - Monte Carlo simulation
KW - secondary electrons
KW - substrate dependence
KW - thickness dependence
KW - β-NaSn13
UR - http://www.scopus.com/inward/record.url?scp=85047825869&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85047825869&partnerID=8YFLogxK
U2 - 10.1117/12.2297440
DO - 10.1117/12.2297440
M3 - Conference contribution
AN - SCOPUS:85047825869
VL - 10586
BT - Advances in Patterning Materials and Processes XXXV
PB - SPIE
ER -