Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

T. P. Ong, Robert P. H. Chang, R. P H Chang, C. W. White

Research output: Contribution to journalArticle

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Abstract

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (approximately 820°C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈112̄0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

Original languageEnglish
Pages (from-to)2429-2439
Number of pages11
JournalJournal of Materials Research
Volume7
Issue number9
Publication statusPublished - Sep 1992

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Diamond
Copper
Diamonds
Nucleation
Carbon
diamonds
Single crystals
nucleation
copper
carbon
single crystals
Graphite
graphite
Plasma enhanced chemical vapor deposition
Ion implantation
ion implantation
Microwaves
vapor deposition
microwaves
Crystals

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces. / Ong, T. P.; Chang, Robert P. H.; Chang, R. P H; White, C. W.

In: Journal of Materials Research, Vol. 7, No. 9, 09.1992, p. 2429-2439.

Research output: Contribution to journalArticle

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